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An Investigation of the Behaviour of a-Si:H Thin Film Transistors Fabricated With Different Proximity Recovery Layer Doping Levels

Published online by Cambridge University Press:  21 February 2011

M.F. Willums ,
P.G. Lecomber  and
M. Hack
M.F. Willums
Affiliation:
University of Dundee, Dundee DD1 4HN, Scotland
P.G. Lecomber
Affiliation:
University of Dundee, Dundee DD1 4HN, Scotland
M. Hack
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304, USA
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Abstract

Experiments have been carried out on inverted staggered amorphous silicon (a-Si:H) thin film transistors (TFTs). Depending on the voltage stressing conditions the electronic characteristics of these devices tend to shift with time [1]. To slow these changes down, and to speed up the recovery of the TFT, a lightly doped compensation or proximity recovery layer (PRL) has been placed in close proximity to the active layer of the undoped a-Si:H [2]. The effects of varying the dopant concentrations in the PRL have been studied by comparing the PRL TFTs with conventional control TFTs containing no PRL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1001
Copyright
Copyright © Materials Research Society 1992

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References

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