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An Investigation of Silicon Oxide Thin Film by Atomic Layer Deposition

Published online by Cambridge University Press:  21 March 2011

Joo-Hyeon Lee ,
Chang-Hee Han ,
Un-Jung Kim ,
Chong-Ook Park ,
Sa-Kyun Rha  and
Won-Jun Lee
Joo-Hyeon Lee
Affiliation:
LSI PA P/J, System LSI Division, Samsung Electronics Co. LTD., Yongin 449-711, Korea
Chang-Hee Han
Affiliation:
Dept. of Materials Engineering, Hanbat National University, Daejeon 305-719, Korea
Un-Jung Kim
Affiliation:
Dept. of Advanced Materials Engineering, Sejong University, Seoul 143-747, Korea
Chong-Ook Park
Affiliation:
Dept. of Materials Sciences and Engineering, KAIST, Daejeon 305-701, Korea.
Sa-Kyun Rha
Affiliation:
Dept. of Materials Engineering, Hanbat National University, Daejeon 305-719, Korea
Won-Jun Lee
Affiliation:
Dept. of Advanced Materials Engineering, Sejong University, Seoul 143-747, Korea
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Abstract

SiO2 thin films were prepared on p-type Si (100) substrates by atomic layer deposition (ALD) using SiH2Cl2 and O3(1.5 at.%)/O2 as precursors at 300. The growth rate of the deposited films increased linearly with increasing amount of simultaneous SiH2Cl2 and O3 exposures, and was saturated at about 0.35 nm/cycle with the reactant exposures of more than 3.6×109L. A larger amount of O3/O2 than that of SiH2Cl2 was required to obtain a saturated deposition reaction. The composition of the deposited film also varied with O3/O2 exposure at a fixed SiH2Cl2 exposure. The Si/O ratio gradually decreased to 0.5 with increasing amount of O3/O2 exposure. Finally, we also compared the physical and electrical characteristics of the ALD films with those of the films deposited by conventional chemical vapor deposition (CVD) methods. In spite of low process temperature, the SiO2 film prepared by the ALD method was in wet etch rate, surface roughness, leakage current and breakdown voltage superior to that by other several CVD methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.34
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Klaus, J. W., Ott, A.W., Johnson, J. M. and George, S. M.: Appl. Phys. Lett. 70, 1092 (1997).Google Scholar
2. Klaus, J. W., Sneh, O., Ott, A. W. and George, S. M.: Surf. Rev. Lett. 6, 435 (1999).Google Scholar
3. Klaus, J. W. and George, S. M.: Surf. Sci. 447, 81 (2000).Google Scholar
4. Plummer, J. D., Deal, M. D. and Griffin, P. B.: Silicon VLSI Technology (Prentice Hall, Upper Saddle River, New Jersey, 2000) 1st ed.Google Scholar
5. Lee, J. H., Kim, U. J., Han, C. H., Rha, S. K., Lee, W. J. and Park, C. O., Jpn. J. Appl. Phys. 43, L328 (2004).Google Scholar
6. Yamamoto, K. and Nakazawa, M.: Jpn. J. Appl. Phys. 33, 285 (1994).Google Scholar