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An In-Situ TEM-Cathodoluminescence Study of Electron Beam Degradation of Luminescence from GaN and In0.1Ga0.9N Quantum Wells

Published online by Cambridge University Press:  11 February 2011

Nicholas M. Boyall ,
Ken Durose  and
Ian M. Watson
Nicholas M. Boyall
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, UK.
Ken Durose
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, UK.
Ian M. Watson
Affiliation:
Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow, G4 ONW, UK.
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Abstract

The effect of electron beam irradiation on the cathodoluminescence (CL) emission from In0.1Ga0.9N/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the In0.1Ga0.9N and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.13
Copyright
Copyright © Materials Research Society 2003

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