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An Enhanced Photoresponse at Dislocation Subgrain Boundaries Revealed by X-Ray Topography of Polysilicon Solar Cells†

Published online by Cambridge University Press:  15 February 2011

S.M. Johnson ,
R.W. Armstrong ,
R.G. Rosemeier ,
G.M. Storti ,
H.C. Lin  and
W.F. Regnault
S.M. Johnson
Affiliation:
Solarex Corporation, Rockville, MD 20850
R.W. Armstrong
Affiliation:
University of Maryland, College Park, MD 20742
R.G. Rosemeier
Affiliation:
University of Maryland, College Park, MD 20742
G.M. Storti
Affiliation:
Solarex Corporation, Rockville, MD 20850
H.C. Lin
Affiliation:
University of Maryland, College Park, MD 20742
W.F. Regnault
Affiliation:
Semix, Incorporated, Gaithersburg, MD 20760
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Abstract

An enhanced photoresponse at dislocation subgrain boundaries (in comparison with grain boundaries and dislocation-associated twin boundaries) is attributed to an increased junction depth at their positions relative to the value of the minority carrier diffusion length, Ln. For reasonably pure material, Ln is determined by the dislocation density. The dislocation microstructure of polysilicon solar cells is advantageously studied by means of the several x-ray topography techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 179
Copyright
Copyright © Materials Research Society 1982

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Footnotes

†

Work supported by Semix, Incorporated under DOE Cooperative Agreement No. DE-FC01-80ET 23197.

References

REFERENCES

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