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An Arxps Investigation of the Initial Growth of Aluminum Films on the (0001) Face of Sapphire.

Published online by Cambridge University Press:  22 February 2011

Mehran Arbab ,
Gary S. Chottiner  and
R. W. Hoffman
Mehran Arbab
Affiliation:
Case Western Reserve University, Department of Materials Science and Engineering, Clevelard, OH 44106 PPG Industries, Inc., Glass Research & Development Center, Pittsburgh, PA 15238–0472.
Gary S. Chottiner
Affiliation:
Case Western Reserve University, Department of Physics, Cleveland, OH 44106
R. W. Hoffman
Affiliation:
Case Western Reserve University, Department of Physics, Cleveland, OH 44106
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Abstract

The (0001) face of α-Al2O3 and the initial growth of ultra-thin aluminum, films deposited on this surface were studied by a combination of low energy electron diffraction, angle resolved x-ray photoelectron spectroscopy and thermal desorption techniques. At high temperatures, the (0001) face of α-Al2O3 reconstructs to form a (√31×√31)R±9° structure which remains stable at lower temperatures, as evidenced by IEED. ARXPS shows that the annealed sanple retains its bulk composition up to the solid-vacuum interface.

Thin Al films were deposited on the above surface by in situ evaporation. ARXPS results indicate a uniform growth of the initial monolayer of aluminum. Further growth (<3 A°) deviated fr the layer by layer adsorption mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 153: Symposium J – Interfaces Between Polymers, Metals, and Ceramics , 1989 , 63
Copyright
Copyright © Materials Research Society 1989

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