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Amorphous Gallium Produced By Pulsed Excimer Laser Irradiation

Published online by Cambridge University Press:  26 February 2011

J. Fröhlingsdorf  and
B. Stritzker
J. Fröhlingsdorf
Affiliation:
Institut für Festkörperforschung, Kernforschungsanlage Jülich, D-5170 Jülich, Fed. Rep. Germany
B. Stritzker
Affiliation:
Institut für Festkörperforschung, Kernforschungsanlage Jülich, D-5170 Jülich, Fed. Rep. Germany
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Abstract

Pure crystalline Ga films (α-Ga, β-Ga) have been irradiated at low temperatures (≤ 20 K) with an Excimer laser. By measuring the superconducting transition temperature Tc and the residual resistivity ≤o, the resulting Ga phases (α-Ga, β-Ga, a-Ga) can be identified.

Both crystalline Ga phases can be transformed into the amorphous phase.

The threshold energy density for the β→ a transition depends on the film thickness, whereas the α →. a transition occurs always at about 225 mJ/cm2 This behavior is in agreement with earlier observations that a-Ga can grow on top of the in-phase but not on the β-phase.

The results of laser quenching are compared with other non-equilibrium techniques for the production of a-Ga, such as vapor quenching and low temperature ion iradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 271
Copyright
Copyright © Materials Research Society 1985

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References

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