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Amorphous Carbon Nitride Films as a Candidate for Low Dielectric Constant Materials

Published online by Cambridge University Press:  10 February 2011

M. Aono ,
S. Nitta ,
T. Iwasaki ,
H. Yokoi ,
T. Itoh  and
S. Nonomura
M. Aono
Affiliation:
Department of Electrical Engineering, Gifu University, 1–1 Yanaido, Gifu, Japan 501–1193
S. Nitta
Affiliation:
Department of Electrical Engineering, Gifu University, 1–1 Yanaido, Gifu, Japan 501–1193
T. Iwasaki
Affiliation:
Department of Electrical Engineering, Gifu University, 1–1 Yanaido, Gifu, Japan 501–1193
H. Yokoi
Affiliation:
Department of Electrical Engineering, Gifu University, 1–1 Yanaido, Gifu, Japan 501–1193
T. Itoh
Affiliation:
Department of Electrical Engineering, Gifu University, 1–1 Yanaido, Gifu, Japan 501–1193
S. Nonomura
Affiliation:
Renewable Energy Systems, Gifu University, 1–1 Yanaido, Gifu, Japan 501–1193
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Abstract

We have succeeded to prepare high resistivity and rather low dielectric constant amorphous carbon nitride films a-CNx (0.52<x<0.86) by the reactive radio frequency magnetron sputtering of a graphite target using nitrogen molecules as a sputter gas.

The resistivity of a-CNx are 5×1016 to 1017 Ω-cm and be estimated to 1020 Ω-cm, when the ratio of the carbon and nitrogen becomes chemically stoichiometry 3 to 4, i.e. C3N4. The resistivity of a-CNx films prepared by a layer-by-layer method, LL-a-CNx, is 1018 Ω -cm for x=0.6. The layer-by-layer method is a cyclic process of a deposition by the sputtering and an etching by atomic hydrogen. The sample LL-a-CNx made by a layer-by-layer method are compared with that of usual method a-CNx. The dielectric constant of a-CNx films calculated from the refractive index n are 3.6 to 2.8 corresponds to nitrogen contents, 0.52<x<0.86. The dielectric constants ε of a-CNx films decrease with the content of nitrogen x. At an ultimate component of a-CNx, at x=4/3, the dielectric constant is estimated to 1.8.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 291
Copyright
Copyright © Materials Research Society 1999

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References

[1] Chiang, C., et al. : “Low-Dielectric Constant Materials IV”, MRS Symposium Proceedings Vol. 511, 1998.Google Scholar
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[4] Iwasaki, T., Aono, M., Nitta, S., Itoh, T. and Nonomura, S.: Diamond and Related Materials (1999) in print.Google Scholar