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Amorphization of Crystalline Phase Change Material by Ion Implantation

Published online by Cambridge University Press:  01 February 2011

Simone Raoux ,
Guy Cohen ,
Robert M. Shelby ,
Huai-Yu Cheng  and
Jean L Jordan-Sweet
Simone Raoux
Affiliation:
[email protected], IBM T. J. Watson Research Center, Yorktown Heights, New York, United States
Guy Cohen
Affiliation:
[email protected], IBM T. J. Watson Research Center, IBM/Macronix PCRAM Joint Project, Yorktown Heights, New York, United States
Robert M. Shelby
Affiliation:
[email protected], IBM Almaden Research Center, San Jose, California, United States
Huai-Yu Cheng
Affiliation:
[email protected], Macronix Emerging Central Lab., IBM/Macronix PCRAM Joint Project, Hsinchu, Taiwan, Province of China
Jean L Jordan-Sweet
Affiliation:
[email protected], IBM T.J. Watson Research Center, Yorktown Heights, New York, United States
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Abstract

Germanium ion implantation at an energy of 30 keV was used as a different method to re-amorphize thin films of crystalline phase change material Ge2Sb2Te5 (GST). It was found that rather low doses of 5×1013 cm-2 were sufficient to re-amorphize GST. Amorphization was determined by X-ray diffraction (XRD) as well as reflectivity measurements. Re-crystallization characteristics of ion-implantation-amorphized samples was studied using time-resolved XRD. It showed that samples re-crystallize at an increased crystallization temperature with increasing dose compared to as-deposited material. A static laser tester was applied to measure the crystallization times of material that was (1) as–deposited amorphous; (2) crystallized by annealing and re-amorphized by melt-quenching using a laser pulse; and (3) crystallized by annealing and re-amorphized by ion implantation. It was found that as-deposited amorphous and high-dose ion implanted samples had longer crystallization times while melt-quenched amorphous and low-dose ion implanted samples had shorter crystallization times.

Keywords

amorphousion-implantationphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H02-06
Copyright
Copyright © Materials Research Society 2010

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