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Ambient Copper-Copper Thermocompression Bonding using Self Assembled Monolayers

Published online by Cambridge University Press:  01 February 2011

Xiaofang Ang
Affiliation:
[email protected], NANYANG TECHNOLOGICAL UNIVERSITY, SCHOOL OF MATERIALS SCIENCE & ENGINEERING, SINGAPORE, Singapore
Jun Wei
Affiliation:
[email protected], SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY, SINGAPORE, Singapore
Zhong Chen
Affiliation:
[email protected], NANYANG TECHNOLOGICAL UNIVERSITY, SCHOOL OF MATERIALS SCIENCE & ENGINEERING, SINGAPORE, Singapore
Chee Cheong Wong
Affiliation:
[email protected], NANYANG TECHNOLOGICAL UNIVERSITY, SCHOOL OF MATERIALS SCIENCE & ENGINEERING, SINGAPORE, Singapore
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Abstract

A typical copper-copper thermocompression bonding process is carried out in an ultrahigh vacuum (UHV) or inert environment at a bonding temperature >300°C. The ultraclean environment serves a single purpose – to maintain oxide-free copper surfaces, allowing intimate physical contact between copper atoms. This study investigates the temperature dependence of direct copper bonding from room temperature to 300°C under ambient condition. An anomalous thermal dependence of bond strength occurs between 80°C to 140°C where an increase in bonding temperature within this regime is in fact, detrimental to joint strength. This is interpreted as a thermal competition between oxidation and bond formation. This study also demonstrates that by simply coating the copper surface with a self assembled monolayer of 1-undecanethiol prior to bonding, Cu joints can be successfully formed at close to ambient temperature without a vacuum, yielding joint shear strengths on the order of 70MPa. The densely packed monolayer serves to passivate the copper surface against oxidation under ambient conditions. The ultrathin organic monolayer structure, as compared to a bulk oxide layer, could be easily displaced during the mechanical deformation at the bonding interface which accompanies thermocompression. This method could be an effective simple bonding solution for three-dimensional integrated chips.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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