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Al/ZnO/a-SiGe:H: A System Protected by the ZnO Buffer from Metal-Induced Crystallization

Published online by Cambridge University Press:  15 February 2011

F. Edelman ,
R. Brener ,
C. Cytermann ,
R. Weil ,
C. Beneking ,
W. Beyer ,
W. Skorupa ,
R. Yankov  and
P. Werner
F. Edelman
Affiliation:
Technion-Israel Institute of Technology, Materials Engineering Faculty and Solid State Institute, Haifa, Israel, [email protected]
R. Brener
Affiliation:
Technion-Israel Institute of Technology, Materials Engineering Faculty and Solid State Institute, Haifa, Israel, [email protected]
C. Cytermann
Affiliation:
Technion-Israel Institute of Technology, Materials Engineering Faculty and Solid State Institute, Haifa, Israel, [email protected]
R. Weil
Affiliation:
Technion-Israel Institute of Technology, Materials Engineering Faculty and Solid State Institute, Haifa, Israel, [email protected]
C. Beneking
Affiliation:
Institute of Thin Films and Ion Technology(ISI), Research Center Jiilich, Germany
W. Beyer
Affiliation:
Institute of Thin Films and Ion Technology(ISI), Research Center Jiilich, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc. and Institute of Ion Beam Physics, Dresden, Germany
R. Yankov
Affiliation:
Research Center Rossendorf Inc. and Institute of Ion Beam Physics, Dresden, Germany
P. Werner
Affiliation:
Max-Planck-Institute of Microstructure Physics, Halle/Saale, Germany.
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Abstract

Metal-Induced-Crystallization (MIC) by the contact of amorphous semiconductors with metals is one of the degradation factors in solar cells. This study has been made on the barrier properties of a ZnO layer between undoped a-SiGe:H and Al metallization films in the structure (001)Si/SiO2/a-SiGe:H/ZnO/Al. Plasma assisted CVD deposition was used to produce a-Si1.xGex:H (x=0 to 1) undoped films over thermally oxidized Si-wafers. There were covered with 500Å and 1000Å thick transparent conductive layers of ZnO. Al and then 1000Å thick films of Al. A set of Al-implanted a-Si, a-Ge, and a-Sio.5Geo.5 films on Si/SiO2 substrates was also prepared to study MIC in an amorphous system with dispersed Al. The structures were annealed in vacuum in the temperature range of 200°C to 400°C for lh. X-ray diffraction studies demonstrated the a-SiGe:H stability against crystallization under ZnO protection up to 400°C. Secondary Ion Mass Spectroscopy didn't reveal any noticeable redistribution of Al inside Al-implanted a-Si:H and a-Si0.5Ge0.5:H samples after annealing at 400°C for lh, but strong Al diffusion was seen in the a-Ge:H layer. Nevertheless, no MIC was observed in any of the Al-implanted a-materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 741
Copyright
Copyright © Materials Research Society 1997

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References

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