Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T02:03:31.286Z Has data issue: false hasContentIssue false
  • English
  • Français

Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface

Published online by Cambridge University Press:  26 June 2014

Aleksey I. Mikhaylov ,
Alexey V. Afanasyev ,
Victor V. Luchinin ,
Sergey A. Reshanov  and
Adolf Schöner
Aleksey I. Mikhaylov
Affiliation:
Acreo Swedish ICT AB, Electrum 236, 16440 Kista, Sweden SPbETU ”LETI”, Prof. Popov st. 5, 197376 St. Petersburg, Russia
Alexey V. Afanasyev
Affiliation:
SPbETU ”LETI”, Prof. Popov st. 5, 197376 St. Petersburg, Russia
Victor V. Luchinin
Affiliation:
SPbETU ”LETI”, Prof. Popov st. 5, 197376 St. Petersburg, Russia
Sergey A. Reshanov
Affiliation:
Ascatron AB, Electrum 236, 16440 Kista, Sweden
Adolf Schöner
Affiliation:
Acreo Swedish ICT AB, Electrum 236, 16440 Kista, Sweden Ascatron AB, Electrum 236, 16440 Kista, Sweden
Get access

Abstract

An alternative approach for reduction of interface traps density at 4H-SiC/SiO2 interface is proposed. Silicon nitride / silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterization of the interface was done by employing metal-oxide semiconductor (MOS) devices, inversion-channel MOS devices and lateral MOS field effect transistors (MOSFETs).

Keywords

electrical propertiessemiconductingdevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd02-04
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Das, M.K., Mater. Sci. Forum 457-460, 1275 (2004)CrossRefGoogle Scholar
Swanson, L.K., Fiorenza, P., Gianazzo, F., Frazzetto, A. and Roccaforte, F., Appl. Phys. Lett. 101, 193501 (2012)CrossRefGoogle Scholar
Li, H., Dimitrijev, S., Harrison, H.B. and Sweatman, D., Appl. Phys. Lett. 70, 2028 (1997)CrossRefGoogle Scholar
Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Di Ventra, M., Pantelides, S.T., Feldman, L.C. and Weller, R.A., Appl. Phys. Lett. 76, 1713 (2000)CrossRefGoogle Scholar
Sheppard, S.T., Melloch, M.R., Cooper, J.A., IEEE Transactions on Electron Devices 41, 1257 (1994)CrossRefGoogle Scholar
Esteve, R., Reshanov, S.A., Savage, S., Bakowski, M., Kaplan, W., Persson, S., Schöner, A. and Zetterling, C.-M., J. Electrochem. Soc. 158, H496–H501 (2011)CrossRefGoogle Scholar
Ghibaudo, G., Electronic Letters 24(9), 543–545 (1988)CrossRefGoogle Scholar
Suzuki, S., Harada, S., Kosugi, R., Senzaki, J., Cho, W. and Fukuda, K., J. Appl. Phys. 92, 6230 (2002)CrossRefGoogle Scholar