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Alternate Titanium Source Compounds for CVD of Ti/TiC Coatings

Published online by Cambridge University Press:  22 February 2011

Thomas J. Groshens ,
Charlotte K. Lowe-Ma ,
Richard C. Scheri  and
Robert Z. Dalbey
Thomas J. Groshens
Affiliation:
Research Department, Naval Air Warfare Center, Weapons Division, China Lake, CA 93555
Charlotte K. Lowe-Ma
Affiliation:
Research Department, Naval Air Warfare Center, Weapons Division, China Lake, CA 93555
Richard C. Scheri
Affiliation:
Research Department, Naval Air Warfare Center, Weapons Division, China Lake, CA 93555
Robert Z. Dalbey
Affiliation:
Research Department, Naval Air Warfare Center, Weapons Division, China Lake, CA 93555
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Abstract

CVD experiments were conducted using (Me3SiCH2)4Ti, Bis(2,4-dimethylpentadienyl) titanium, Cl3TiMe, (Me3SiCH2TiCl3 to evaluate their potential as Ti precursor compounds. Only Me3SiCH2TiCl3 was suitable for atmospheric CVD applications. Uniform thin films of polycrystalline TiC were deposited using Me3SiCH2TiCl3 in an argon ambient between 700 °C and 800 °C. A mechanism involving initial loss of Me3SiCl to generate a titanium carbene intermediate is proposed. Thin films of TiC deposited on Si[111] were characterized using XRD and AES. Depth profile line shape analysis showed only TiC and elemental Si in the interfacial region. XRD indicates some titanium silicide is formed at 800 °C. In a hydrogen ambient, hydrogenolysis of the alkyl group occurs and very poor film growth results were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 299
Copyright
Copyright © Materials Research Society 1993

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