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AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique

Published online by Cambridge University Press:  01 February 2011

Ming-Hua Lo ,
Zhen-Yu Li ,
Shih-Wei Chen ,
Jhih-Cang Hong ,
Ting-Chang Lu ,
Hao-Chung Kuo  and
Shing-Chung Wang
Ming-Hua Lo
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan, +886-035-712121-56327
Zhen-Yu Li
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Shih-Wei Chen
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Jhih-Cang Hong
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Ting-Chang Lu
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Hao-Chung Kuo
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Shing-Chung Wang
Affiliation:
[email protected], National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
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Abstract

In this work, we report on the growth of ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). The root-mean-square value of the surface morphology was only 0.35 nm observed from the atomic force microscope image and no crack was found on the surface. Both of the high resolution X-ray diffraction curves and transmission electron microscope images showed sharp interfaces between SLs layers and QWs with good periodicity. These results demonstrate that the ALD could be a very useful technique for controlling the crystalline quality and thickness of the III-nitride epilayer.

Keywords

atomic layer depositioncrystal growthtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C05-07
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

[1] Iizuka, Norio, Kaneko, Kei, Suzuki, Nobuo, Asano, Takashi, Noda, Susumu, and Wada, Osamu, Appl. Phys. Lett. 77, 648 (2000)Google Scholar
[2] Henry, Ümit Özgür Everitt, O. He, Lei, and Morkoç, Hadis, Appl. Phys. Lett. 82, 4080 (2003)Google Scholar
[3] Schmidt, T. J. Yang, X. H. Shan, W. Song, J. J. Salvador, A. Kim, W. Ö. Aktas, Botchkarev, A. and Morkoç, H., Appl. Phys. Lett. 68, 1820 (1996)Google Scholar
[4] Han, J. Crawford, M. H. Shul, R. J. Figiel, J. J. Banas, M. and Zhang, L. Song, Y. K. Zhou, H. and Nurmikko, A. V. Appl. Phys. Lett. 73, 1688 (1998)Google Scholar
[5] Joan Redwing, M. David Loeber, A. S. Anderson, Neal G. Tischler, Michael A., and Flynn, Jeffrey S., Appl. Phys. Lett. 69, 1 (1996)Google Scholar
[6] Sun, Greg, Soref, Richard A. and Khurgin, Jacob B., Superlattices Microstruct. 37, 107 (2005)Google Scholar
[7] Takano, Takayoshi, Narita, Yoshinobu, Horiuchi, Akihiko, and Kawanishi, Hideo, Appl. Phys. Lett. 84, 3567 (2004)Google Scholar
[8] Adivarahan, V. Sun, W. H. Chitnis, A. Shatalov, M. Wu, S. Maruska, H. P. and Khan, M. Asif, Appl. Phys. Lett. 85, 2175 (2004)Google Scholar
[9] Kawakami, Y. Shen, X.Q., Piao, G. Shimizu, M. Nakanishi, H. and Okumura, H. J. Crystal Growth 300, 168 (2007)Google Scholar
[10] Kawakami, Y. Nakajima, A. Shen, X. Q. Piao, G. Shimizu, M. and Okumura, H. Appl. Phys. Lett. 90, 242112 (2007)Google Scholar
[11] Tokunaga, H. Ubukata, A. Yano, Y. Yamaguchi, A. Akutsu, N. Yamasaki, T. and Matsumoto, K. J. Cryst. Growth. 272, 348 (2004)Google Scholar
[12] Park, Y S, Park, C M, Lee, S J, Im, Hyunsik, Kang, T W, Oh, Jae-Eung, Kim, Chang Soo, and Noh, Sam Kyu, Semicond. Sci. Technol. 20, 775 (2005)Google Scholar
[13] Huang, G. S. Lu, T. C. Yao, H. H. Kuo, H. C. Wang, S. C. Lin, Chih-Wei, and Chang, Li, Appl. Phys. Lett. 88, 061904 (2006)Google Scholar
[14] Torabi, A. Hoke, W. E. Mosca, J. J. Siddiqui, J. J. Hallock, R. B. and Kennedy, T. D. J. Vac. Sci. Technol. B 23, 1194 (2005)Google Scholar
[15] Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Jr., Treat, D. W. and Bour, D. P. J. Appl. Phys. 76, 2697 (1994)Google Scholar
[16] Smith, M. Lin, J. Y. Jiang, H. X. Salvador, A. Botchkarev, A. Kim, W. and Morkoc, H. Appl. Phys. Lett. 69, 2453 (1996)Google Scholar