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AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates

Published online by Cambridge University Press:  01 February 2011

Travis Anderson ,
Fan Ren ,
Lars Voss ,
Mark Hlad ,
Brent P Gila ,
Stephen Pearton ,
Lance Covert ,
Jenshan Lin ,
Julien Thuret  and
H Lahreche
...Show all authors
Travis Anderson
Affiliation:
[email protected], University of Florida, Chemical Engineering, PO Box 116005, Gainesville, FL, 32611, United States
Fan Ren
Affiliation:
[email protected], University of Florida, Chemical Engineering, PO Box 116005, Gainesville, FL, 32611, United States
Lars Voss
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, PO Box 116400, Gainesville, FL, 32611, United States
Mark Hlad
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, PO Box 116400, Gainesville, FL, 32611, United States
Brent P Gila
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, PO Box 116400, Gainesville, FL, 32611, United States
Stephen Pearton
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, PO Box 116400, Gainesville, FL, 32611, United States
Lance Covert
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, PO Box 116130, Gainesville, FL, 32611, United States
Jenshan Lin
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, PO Box 116130, Gainesville, FL, 32611, United States
Julien Thuret
Affiliation:
[email protected], Picogiga International SAS, Place Marcel Rebuffat, Parc de Villejust, 91971, Courtaboeuf, N/A, France
H Lahreche
Affiliation:
[email protected], Picogiga International SAS, Place Marcel Rebuffat, Parc de Villejust, 9 1971, Courtaboeuf, N/A, France
P Bove
Affiliation:
[email protected], Picogiga International SAS, Place Marcel Rebuffat, Parc de Villejust, 91971, Courtaboeuf, N/A, France
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Abstract

The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gate-drain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ∼40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm−1.

Keywords

III-Vnitridedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I16-02
Copyright
Copyright © Materials Research Society 2007

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References

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