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ALD of Lanthanum Aluminate Using Lanthanum Formamidinate Precursor

Published online by Cambridge University Press:  01 February 2011

Huazhi Li ,
Deodatta Vinayak Shenai ,
Ralph Pugh  and
Jiyoung Kim
Huazhi Li
Affiliation:
[email protected], Rohm and Haas Electronic Materials LLC, Advanced Thin-Film Technologies, 60 Willow Street, North Andover, MA, 01845, United States
Deodatta Vinayak Shenai
Affiliation:
[email protected], Rohm and Haas Electronic Materials LLC, Advanced Thin-Film Technologies, 60 Willow Street, North Andover, MA, 01845, United States
Ralph Pugh
Affiliation:
[email protected], Rohm and Haas Electronic Materials LLC, Advanced Thin-Film Technologies, 60 Willow Street, North Andover, MA, 01845, United States
Jiyoung Kim
Affiliation:
[email protected], University of Texas at Dallas, Materials Science and Engineering, Richardson, TX, 75083, United States
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Abstract

The physical and electrical characteristics of La2O3 and LaAlO3 films, deposited by atomic layer deposition (ALD) and using a new La formamidinate precursor (La-FAMD), were investigated. The La-FAMD precursor has superior thermal stability and is also the most volatile La source available today. The vapor pressure of La-FAMD, maintained at 100 ºC, is approximately 60 times higher than the commercial available source La-THD (THD = tetramethylheptanedionato).

Keywords

atomic layer depositionLametalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1036: Symposium M – Materials and Hyperintegration Challenges in Next-Generation Interconnect Technology , 2007 , 1036-M04-18
Copyright
Copyright © Materials Research Society 2008

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