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Aging Characteristics of Ferroelectric Epitaxial BaTiO3/YBa2Cu3O7 Heterostructures

Published online by Cambridge University Press:  15 February 2011

Samuel D. Harkness ,
J. W Viatella ,
V. Nagabushnam  and
R. K. Singh
Samuel D. Harkness
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL. 32611-2066.
J. W Viatella
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL. 32611-2066.
V. Nagabushnam
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL. 32611-2066.
R. K. Singh
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL. 32611-2066.
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Abstract

The nature of ferroelectric aging of epitaxial BaTiO3YBa2Cu3O7 heterostructures grown by laser deposition was investigated as a function of rricrostructure in the dielctric layer. Molar amounts of SrTiO3 were then substitutionally added to analyze the effect on the rnicrostructure and electrical properties. Corresponding shifts in c/a ratio and curie temperature were correlated to changes in aging rate (%δC/decade time). Microstructural analysis was provided by high-resolution x-ray diffraction (HRXRD), and Rutherford backscattering spectroscopy (RBS). Results indicate a moderate upward shift in c/a ratios from theoretical values due to increasing lattice strain across the bilayer interface. Minimum channel yields in RBS spectra were maintained between 6–8% for BaTiO3 purities above 60 %. Dielectric measurements were conducted using an impedance analyzer equipped with an isothermal chamber capable of maintaining ±1°C. The dielectric properies were consistent with c-axis oriented BaTiO3 values (k=120, D=.02)Minimum aging rates are observed at the lower c/a ratio compositions to be as low as .07%δC/decade.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 373
Copyright
Copyright © Materials Research Society 1994

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References

1. Bursky, D., Electronic Design 7 (1989) 97.Google Scholar
2. Sudhama, C., Kim, J., Lee, J., Chikarmnane, V., Shepherd, W., and Myers, E. R., J. Vac. Sci. Tech. B 11 (1993) 1302.Google Scholar
3. VWber, S., Electronics 2 (1988) 91.Google Scholar
4. Carroll, K.R., Pond, J.M., Chrisey, D.B., Horwitz, J.S., Leuchtner, R. E., and Grabowski, K. S., Appl. Phys. Lett. 62 (1993) 1845.Google Scholar
5. Evans, J.T., Wonmack, R, IEEEJ. Sol. St. Circ. 23 (1988) 1171.CrossRefGoogle Scholar
6. Reitze, D.H., Haton, E., Ramesh, R., Etemad, S., Leaird, D.E., Sands, T., Karim, Z., and Tanguay, A. R. Jr., Appl. Phys. Lett. 63 (1993) 596.Google Scholar
7. lembo, A, Fuso, F., Allegrini, M., Arimondo, E., Berardi, V., Spinelli, N., Leccabue, F., Watts, B.E., Franco, G., and Chiorboli, G., Appl. Phys. Lett. 63 (1993) 1194.Google Scholar
8. Marsh, A.M., Harkness, S.D., and Singh, R K, Appl. Phys. Lett. 62 (1993) 952.Google Scholar
9. Ha, S.D. Google Scholar