Advances in Ir-Led Technology

Abstract

Due to the world wide demand for IR emitting devices like IR-LED, printhead for laser printers, readout of optical storage devices, serial and parallel fibber/guided wave optical links and free space optical interconnects for remote controllers there is a great interest in multi wafer technology. In this paper we present growth results with respect to IR applications with the Planetary Reactor® system using AlGaAs/GaAs and longer wavelength material. For the mass production of LEDs the Planetary Reactor® system fulfills not only to grow high quality films with excellent uniformities, which results on high yield on wafer, but also to grow with high precursor utilization efficiency and wafer tliroughput. This is proven for thick layers by an excellent growth stability and a thickness uniformity better than ±2%. These high uniformities are achieved at conditions of growth efficiency in the range of 30–50% for group III materials and a comparatively low V-III ratio. To increase the intensity of LEDs GaAs/AlAs Bragg reflectors were grown. Reflectivity characteristics measurement and high resolution X-ray diffractometer measurements confirmed the thickness uniformity in the order of ±1% on 4″ wafers. The excellent thickness uniformity is also achieved on a 9×6″ configuration. For the first time in this study also the 7 × 2″ performance of InP based materials is reported.