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Advances in GaAs Mosfet's Using Ga2O3(Gd2O3) as Gate Oxide

Published online by Cambridge University Press:  10 February 2011

Y. C. Wang ,
M. Hong ,
J. M. Kuo ,
J. P. Mannaerts ,
J. Kwo ,
H. S. Tsai ,
J. J. Krajewski ,
J. S. Weiner ,
Y. K. Chen  and
A. Y. Cho
Y. C. Wang
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
J. M. Kuo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
J. P. Mannaerts
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
J. Kwo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
H. S. Tsai
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
J. J. Krajewski
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
J. S. Weiner
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
Y. K. Chen
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
A. Y. Cho
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
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Abstract

In this article, we review the recent progress on GaAs MOSFET's using in-situ MBE-grown Ga2O3(Gd2O3) as the gate dielectric. Both depletion-mode (D-mode) and inversion-mode (I-mode) GaAs MOSFET's with negligible drain current drift and hysteresis are demostrated. The absence of drain current drift and hysteresis indicates that the excellent stability of the oxide and low oxide/GaAs interface state density have been achieved. The drain current density and transconductance are about one order of magnitude higher than the best previous reported data in the literature for an inversion-mode GaAs MOSFET. Excellent high frequency and power performances were also measured from the depletion-mode devices. These improvements are attributed to the excellent Ga2O3(Ga2O3) oxide properties and novel processing techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 219
Copyright
Copyright © Materials Research Society 1999

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References

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