Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T19:41:51.893Z Has data issue: false hasContentIssue false
  • English
  • Français

Advanced Deposition Phase Diagrams for Guiding Si:H-Based Multijunction Solar Cells

Published online by Cambridge University Press:  01 February 2011

Jason Collins ,
Nikolas J. Podraza ,
Jian Li ,
Xinmin Cao ,
Xunming Deng  and
Robert W. Collins
Jason Collins
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Nikolas J. Podraza
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Jian Li
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Xinmin Cao
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Xunming Deng
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Robert W. Collins
Affiliation:
[email protected], University of Toledo, Physics and Astronomy, 2801 W. Bancroft Street, Mail drop 111, Toledo, OH, 43606, United States
Get access

Abstract

Phase diagrams have been established to describe very high frequency (vhf) plasma-enhanced chemical vapor deposition (PECVD) processes for intrinsic hydrogenated silicon (Si:H) and silicon-germanium alloy (Si1-xGex:H) thin films using crystalline Si substrates that have been over-deposited with n-type amorphous Si:H (a-Si:H). The Si:H and Si1-xGex:H processes are applied for the top and middle i-layers of triple-junction a-Si:H-based n-i-p solar cells fabricated at University of Toledo. Identical n/i cell structures were co-deposited on textured Ag/ZnO back-reflectors in order to correlate the phase diagram and the performance of single-junction solar cells, the latter completed through over-deposition of the p-layer and top contact. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si1-xGex:H solar cells are obtained when the i-layers are prepared under maximal H2 dilution conditions.

Keywords

photovoltaicplasma-enhanced CVD (PECVD) (deposition)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A15-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Yang, J., Banerjee, A., and Guha, S., Appl. Phys. Lett. 70, 2975 (1997).Google Scholar
[2] Deng, X., Liao, X.B., Han, S.J., Povolny, H., and Agarwal, P., Solar Energy Mater. Solar Cells 62, 89 (2000).Google Scholar
[3] Tsu, D.V., Chao, B.S., Ovshinsky, S.R., Guha, S., and Yang, J., Appl. Phys. Lett. 71, 1317 (1997).Google Scholar
[4] Collins, R.W. and Ferlauto, A.S., Curr. Opinion Solid State Mater. Sci. 6, 425 (2002).Google Scholar
[5] An, I., Zapien, J.A., Chen, C., Ferlauto, A.S., Lawrence, A.S., and Collins, R.W., Thin Solid Films 455, 132 (2004).Google Scholar
[6] Lautenschlager, P., Garriga, M., Viña, L., and Cardona, M., Phys. Rev. B 36, 4821 (1987).Google Scholar
[7] Ferlauto, A.S., Ferreira, G.M., Pearce, J.M., Wronski, C.R., Collins, R.W., Ganguly, G., and Deng, X., J. Appl. Phys. 92, 2424 (2002).Google Scholar