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Adsorption-Controlled Growth of Ferroelectric PbTiO, and Bi4Ti3O12 Films for Nonvolatile Memory Applications by MBE

Published online by Cambridge University Press:  15 February 2011

C. D. Theis
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005, [email protected]
J. Yeh
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005, [email protected]
M. E. Hawley
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
G. W. Brown
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
D. G. Schlom
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005, [email protected]
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Abstract

Epitaxial PbTiO3 and Bi4Ti3O12 thin films have been grown on (100) SrTiO3 and (100) LaAlO3 substrates by reactive molecular beam epitaxy (MBE). Titanium is supplied to the film in the form of shuttered bursts each containing a one monolayer dose of titanium atoms for the growth of PbTi03 and three monolayers for the growth of Bi4Ti3O12. Lead, bismuth, and ozone are continuously supplied to the surface of the depositing film. Growth of phase pure, c-axis oriented epitaxial films with bulk lattice constants is achieved using an overpressure of these volatile species. With the proper choice of substrate temperature (600 – 650 °C) and ozone background pressure (PO3 = 2×10−5 Torr), the excess of the volatile metals and ozone desorb from the surface of the depositing film leaving a phase-pure stoichiometric crystal. The smooth PbTiO3 surface morphology revealed by atomic force microscopy (AFM) suggests that the PbTiO3 films grow in a layer-by-layer fashion. In contrast the Bi4Ti3O12 films contain islands which evolve either continuously or around screw dislocations via a spiral-type growth mechanism.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Aurivillius, B., Arkiv Kemi 1, 463 (1949);Google Scholar
Aurivillius, B., Arkiv Kemi 1, 499 (1949);Google Scholar
Aurivillius, B., Arkiv Kemi 2, 519 (1950);Google Scholar
Aurivillius, B., Arkiv Kemi 5, 39 (1952);Google Scholar
Aurivillius, B. and Fang, P.H., Phys. Rev. 126, 893 (1962).Google Scholar
2. Subbarao, E. C., Ferroelectrics 5, 267 (1973).Google Scholar
3. Landolt-Bornstein, : Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, Vol. 16a, edited by Hellwege, K.-H. (Springer-Verlag, Berlin, 1981), pp. 77, 237.Google Scholar
4. A-Paz de Araujo, C., Cuchiaro, J. D., McMillan, L. D., Scott, M. C, and Scott, J. F., Nature 374, 627 (1995).Google Scholar
5. Mannhart, J., Supercond. Sci. Technol. 9, 49 (1996).Google Scholar
6. Theis, C.D. and Schlom, D. G., to be published in J. Cryst. Growth.Google Scholar
7. Varian Vacuum Products, Lexington, MA.Google Scholar
8. Theis, C.D. and Schlom, D. G., J. Vac. Sci. Technol. A 14, 2677 (1996).Google Scholar
9. Kawasaki, M., Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezawa, T., Yoshimoto, M., and Koinuma, H., Science 266, 1540 (1994).Google Scholar
10. Reaney, I. M., Roulin, M., Shulman, H. S., and Setter, N., Ferroelectrics 165, 295 (1995).Google Scholar
11. de Keijser, M. and Dormans, G. J. M., MRS Bulletin, 37 (June, 1996).Google Scholar
12. Gerber, C., Anselmetti, D., Bednorz, J. G., Mannhart, J., and Schlom, D. G., Nature 350, 279 (1991).Google Scholar
13. Hawley, M., Raistrick, I. D., Beery, J. G., and Houlton, R. J., Science 251, 1587 (1991).Google Scholar