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Adjusting the Defect Profile in a-Si:H Solar Cells with Energy Resolved Electron or Laser Beams: Experiment and Modeling

Published online by Cambridge University Press:  16 February 2011

K. Vasanth
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
D. Caputo
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
M. Bennett
Affiliation:
Solarex Thin Film Division, Newtown PA 18940
S. Bae
Affiliation:
Penn State University, University Park, PA 16802
S. Fonash
Affiliation:
Penn State University, University Park, PA 16802
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Abstract

We light-soaked a-Si:H pin solar cells with blue laser light through the front glass substrate or electron irradiated them through the back Al layer. By using short wavelength light and energy resolved electron beams we localize the damage preferentially near the p/i or n/i interface and thus study their effect on cell performance. I-V characteristics and quantum efficiency spectra were measured before and after the damage was introduced. We Modeled the changes in the quantum efficiency using the numerical device Model AMPS. Comparing changes in the measured and modeled quantum efficiencies (QE) we find that cells light-soaked with the blue laser have damage localized near the front of the device, and localized near the back for cells irradiated with electrons. This indicates that quantum efficiency measurements are sensitive to the location Of defects in the i-layer of the solar cell. However after long light-soaking and electron irradiation times the difference between the two types of damage becomes less visible in the QE Measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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