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Adjusting the Defect Profile in a-Si:H Solar Cells with Energy Resolved Electron or Laser Beams: Experiment and Modeling
Published online by Cambridge University Press: 16 February 2011
Abstract
We light-soaked a-Si:H pin solar cells with blue laser light through the front glass substrate or electron irradiated them through the back Al layer. By using short wavelength light and energy resolved electron beams we localize the damage preferentially near the p/i or n/i interface and thus study their effect on cell performance. I-V characteristics and quantum efficiency spectra were measured before and after the damage was introduced. We Modeled the changes in the quantum efficiency using the numerical device Model AMPS. Comparing changes in the measured and modeled quantum efficiencies (QE) we find that cells light-soaked with the blue laser have damage localized near the front of the device, and localized near the back for cells irradiated with electrons. This indicates that quantum efficiency measurements are sensitive to the location Of defects in the i-layer of the solar cell. However after long light-soaking and electron irradiation times the difference between the two types of damage becomes less visible in the QE Measurements.
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- Copyright © Materials Research Society 1994
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