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Activation of Si-N Modes in Silicon by Pulsed Laser Annealing*

Published online by Cambridge University Press:  25 February 2011

H. J. Stein ,
P. S. Peercy  and
C. R. Hills
H. J. Stein
Affiliation:
Sandia National LaboratoriesAlbuquerque, NM87185
P. S. Peercy
Affiliation:
Sandia National LaboratoriesAlbuquerque, NM87185
C. R. Hills
Affiliation:
Sandia National LaboratoriesAlbuquerque, NM87185
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Abstract

Retention and bonding of nitrogen implanted into crystalline Si were examined by infrared absorption (ir) and transmission electron microscopy (TEM) after furnace and pulsed laser annealing. Localized Si-N vibrational modes for N-N pairs are observed, and the associated ir band intensities increase upon pulsed annealing. Furnace annealing above 600°C decreases the ir intensity for N-N pairs and fine structure defects appear in TEM. Subsequent laser annealing removes most of the fine structure and reactivates the pair spectrum which we interpret as dissolution of N precipitates and pair formation upon quenching from the melt. Any realistic model for N in Si must include the formation and consequences of N-N pairs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 315
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE-AC04-76DP00789.

References

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