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Activation Enthalpy of Sb Diffusion in Biaxially Compressed SiGe Layers

Published online by Cambridge University Press:  10 February 2011

A. Yu. Kuznetsovt ,
J. Cardenast ,
B. G. Svenssont ,
A. Nylandsted Larsen  and
J. Lundsgaard Hansen
A. Yu. Kuznetsovt
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista- Stockholm, Sweden; [email protected]
J. Cardenast
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista- Stockholm, Sweden; [email protected]
B. G. Svenssont
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista- Stockholm, Sweden; [email protected]
A. Nylandsted Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
J. Lundsgaard Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
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Abstract

Enhanced Sb diffusion in biaxially compressed Si1-x-Gex layers is observed. Assuming the prefactors to be stress independent the Sb diffusion coefficients in biaxially compressed Si0.9Ge0.2 and Si0 8 Ge0.2 were extracted as 0.4 × 102 exp[− (3.98(eV) ± 0.12)/kT] and 1.3x 102 exp[− (3.85(eV) ±0.12)/kT] cm2 /s, respectively. The activation volume of Sb diffusion in Si1-xGex (x ≤ 0.2) is estimated to be close to ω, where ω is the volume corresponding to a silicon lattice site.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 213
Copyright
Copyright © Materials Research Society 1998

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References

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