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Activation Characteristics of Implanted Dopants in InAs, GaSb and GaP After Rapid Thermal Annealing

Published online by Cambridge University Press:  26 February 2011

A. R. Von Neida ,
K. T. Short ,
J. M. Brown  and
S. J. Pearton
A. R. Von Neida
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
J. M. Brown
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
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Abstract

We have studied in some detail the activation of implanted Si and Mg ions in InAs, GaSb and GaP after rapid thermal annealing. Even at doses of 1015 cm−2, the activation percentage of Mg is relatively high after optimum anneals -80% in GaP, 55% in GaSb and 45% in InAs. There is considerable outdiffusion of Mg in all three semiconductors for extended heat treatments. The amphoteric species Si shows good activation (60% for 1015 cm−2 dose) in InAs, a saturation electrically active concentration of ∼3 × 1013 cm−2 in GaP, and very low electrical activity in GaSb. The regrowth and damage removal characteristics in the three materials are similar to those of GaAs and InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 689
Copyright
Copyright © Materials Research Society 1988

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References

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