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Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles

Published online by Cambridge University Press:  01 February 2011

Trudo H. Clarysse ,
Alain Moussa ,
Frederik Leys ,
Roger Loo ,
Wilfried Vandervorst ,
Mark C. Benjamin ,
Robert J. Hillard ,
Vladimir N. Faifer ,
Michael I. Current  and
Rong Lin
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Trudo H. Clarysse
Affiliation:
[email protected], IMEC, SPDT/MCA, Kapeldreef 75, Leuven, N/A, B-3001, Belgium, +32 16 281480, +32 16 281 576
Alain Moussa
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, N/A, B-3001, Belgium
Frederik Leys
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, N/A, B-3001, Belgium
Roger Loo
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, N/A, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, N/A, B-3001, Belgium
Mark C. Benjamin
Affiliation:
[email protected], Solid State Measurements, Inc., 110 Technology Drive, Pittsburgh, PA, 15275, United States
Robert J. Hillard
Affiliation:
[email protected], Solid State Measurements, Inc., 110 Technology Drive, Pittsburgh, PA, 15275, United States
Vladimir N. Faifer
Affiliation:
[email protected], Frontier Semiconductor, Inc., 1631 North First Street, San Jose, CA, 95112, United States
Michael I. Current
Affiliation:
[email protected], Frontier Semiconductor, Inc., 1631 North First Street, San Jose, CA, 95112, United States
Rong Lin
Affiliation:
[email protected], Capres A/S, Scion DTU, Building 373, Kgs Lyngby, N/A, DK-2800, Denmark
Dirch H. Petersen
Affiliation:
[email protected], Capres A/S, Scion DTU, Building 373, Kgs Lyngby, N/A, DK-2800, Denmark
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Abstract

Comparison of state-of-the-art zero-penetration sheet resistance tools on ultra-shallow Boron CVD layers on top of a medium doped As layer.

Keywords

activation analysischemical vapor deposition (CVD) (deposition)dopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C05-07
Copyright
Copyright © Materials Research Society 2006

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References

1 ITRS roadmap, FEP section (www.itrs.net/common/2005ITRS/Home2005)Google Scholar
2 Aderhold, W., Jain, A., Foad, M., Mayur, A., Proceedings International conference on Ion Implantation Technology 2000, Alpbach, Austria, 199 Google Scholar
3 Clarysse, T., et al., Mater. Science and Engineering B 114–115, 166 (2004)Google Scholar
4 Caymax, M., Loo, R., Brijs, B., Vandervorst, W., Howard, D.J., Kimura, K., Nakajima, K., Mat. Res. Soc. Symp. Proc. 533 (1998), 339 Google Scholar
5 ASTM standard F723-88, American Society for Testing and Materials, Philadelphia.Google Scholar
6 Clarysse, T., Vanhaeren, D., Hoflijk, I., Vandervorst, W., Mater. Science and Engineering R 47, 123 (2004)Google Scholar
7 Benjamin, M. C., Hillard, R. J., Borland, J.O., Nuclear Instr. and Methods in Phys. Research, section B, 237, 351 (2005)Google Scholar
8 Petersen, C.L., Hansen, T.M., et. Al. Sensors and Actuators A 96, 53 (2002)Google Scholar
9 Faifer, V.N., Current, M.I., Wong, T.M.H., et. al., J. Vac. Sci. Technol. B 24, 414 (2006)Google Scholar
10 Clarysse, T., Vandervorst, W., Lin, R., Petersen, D.H., Nielsen, P.F., European Materials Research Society conference, Nice, France, 2006.Google Scholar