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Accurate Reconstruction of the Density of States in a-Si:H by Photothermal and Photoconductive Spectra.

Published online by Cambridge University Press:  01 January 1993

G. Amato ,
F. Giorgis  and
C. Manfredotti
G. Amato
Affiliation:
National Electrotechnical Institute G.Ferraris, Strada delle Cacce 91, 10135, Torino, Italy
F. Giorgis
Affiliation:
National Electrotechnical Institute G.Ferraris, Strada delle Cacce 91, 10135, Torino, Italy
C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, via P. Giuria 1, 10125, Torino, Italy
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Abstract

The distribution of occupied states in a-Si:H has been inferred by applying a new self- consisting iterative method to the absorption coefficient spectra. This procedure does not require any assumption about the localized states below the Fermi level, and provides a more accurate insight with respect to the simple derivative method. Numerical simulations have been made in order to probe the reliability of our method. The optical spectra have been obtained by means of Photothermal Deflection Spectroscopy (PDS) and Constant Photocurrent Method (CPM); the comparison between the results as obtained by the two techniques suggests that different sensitivities to electronic transitions are involved; this can be used to infer information about the unoccupied defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 345
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1) Jackson, W.B., Amer, N.M., Boccara, C. and Fournier, D., Appl. Optics 20, 1333 (1981).Google Scholar
2) Kocka, J., Vanecek, M., Kozisek, Z., Stika, O. and Beichler, J., Jour. non-Cryst. Solid 59/60, 293 (1983).Google Scholar
3) Amato, G., Benedetto, G., Boarino, L. and Spagnolo, R., Solid State Comm. 77, 177 (1991).Google Scholar
4) Vanecek, M., Abraham, A., Stika, O., Stuchlik, J. and Kocka, J., Physica Status Solidi (a) 83, 617 (1984)Google Scholar
5) Kocka, J., Vanecek, M., and Triska, A. in “Advances in Disordered Semiconductors, Vol.1, Amorphous Silicon and Related Materials, Vol. A” Fritzsche, H. ed. (World Scientific, Singapore), (1988).Google Scholar
6) Wagner, S., Chu, V., Shen, D.S., Conde, J.P., Aljishi, S. and Smith, Z.E., Mat. Res. Soc. Symp. Proc. 118 (MRS, Pittsburgh), (1989).Google Scholar
7) Hata, N. and Wagner, S., Mat. Res. Soc. Symp. Proc. 219, (MRS, Pittsburgh), (1991).Google Scholar
8) Zhong, F. and Cohen, J. D., Mat. Res. Soc. Symp. Proc. Spring 1992 Google Scholar
9) Lee, C., Turner, W. and Paul, W, Jour, of Non-Cryst. Sol. 137&138. 367, (1991).Google Scholar
10) Amato, G. and Fizzotti, F., Phys. Rev. B45, 14108, (1992).Google Scholar