Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Wang, Xiao-Hui
Shi, Feng
Guo, Hui
Hu, Cang-Lu
Cheng, Hong-Chang
Chang, Ben-Kang
Ren, Ling
Du, Yu-Jie
and
Zhang, Jun-Ju
2012.
The optimal thickness of a transmission-mode GaN photocathode.
Chinese Physics B,
Vol. 21,
Issue. 8,
p.
087901.
Yang, Ming Zhu
Guo, Jing
and
Wang, Mei Shan
2013.
Research on Optical Properties of Ga<sub>1-x</sub>Al<sub>x</sub>N with Different Al Component.
Applied Mechanics and Materials,
Vol. 423-426,
Issue. ,
p.
258.
Yang, Mingzhu
Hao, Guanghui
and
Chang, Benkang
2015.
Research on photoemission and spectra response of NEA Ga1−xAlxN photocathodes.
Optik - International Journal for Light and Electron Optics,
Vol. 126,
Issue. 19,
p.
1905.
Yang, Mingzhu
Chang, Benkang
Hao, Guanghui
Wang, Honggang
and
Wang, Meishan
2015.
Optoelectronic properties of GaN, AlN, and GaAlN alloys.
Optik,
Vol. 126,
Issue. 22,
p.
3357.
Massabuau, Fabien C-P.
Rhode, Sneha L.
Horton, Matthew K.
O’Hanlon, Thomas J.
Kovács, András
Zielinski, Marcin S.
Kappers, Menno J.
Dunin-Borkowski, Rafal E.
Humphreys, Colin J.
and
Oliver, Rachel A.
2017.
Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.
Nano Letters,
Vol. 17,
Issue. 8,
p.
4846.
Chen, Hai‐feng
Chen, Yi‐Ren
Song, Hang
Li, Zhi‐Ming
Jiang, Hong
Li, Da‐Bing
Miao, Guo‐Qing
Sun, Xiao‐Juan
and
Zhang, Zhi‐Wei
2017.
Dependence of dark current and photoresponse on polarization charges for AlGaN‐based heterojunction p–i–n photodetectors.
physica status solidi (a),
Vol. 214,
Issue. 6,
Fu, Xiaoqian
Li, Yang
Li, Zhiming
Zhang, Chunwei
Yue, Wenjing
and
Yang, Mingzhu
2018.
Study of GaN/AlGaN photocathode with variable aluminum AlxGa1−xN material in emission layer.
Optik,
Vol. 158,
Issue. ,
p.
363.
Lutsenko, Evgenii V.
Rzheutski, Mikalai V.
Vainilovich, Aliaksei G.
Svitsiankou, Illia E.
Tarasuk, Nikolai P.
Yablonskii, Gennadii P.
Alyamani, Ahmed
Petrov, Stanislav I.
Mamaev, Viktor V.
and
Alexeev, Alexey N.
2018.
Investigation of Photoluminescence, Stimulated Emission, Photoreflectance, and 2DEG Properties of Double Heterojunction AlGaN/GaN/AlGaN HEMT Heterostructures Grown by Ammonia MBE.
physica status solidi (a),
Vol. 215,
Issue. 9,
Sato, Kosuke
Yasue, Shinji
Ogino, Yuya
Tanaka, Shunya
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
and
Akasaki, Isamu
2019.
Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer.
Applied Physics Letters,
Vol. 114,
Issue. 19,
Kalra, Anisha
Rathkanthiwar, Shashwat
Muralidharan, Rangarajan
Raghavan, Srinivasan
and
Nath, Digbijoy N
2020.
Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes.
Semiconductor Science and Technology,
Vol. 35,
Issue. 3,
p.
035001.
Liu, Zesen
Chen, Liang
Zhang, Shuqin
Meng, Qingyang
Gu, Zhenhuan
and
Hua, Jing
2020.
Proceedings of 2018 International Conference on Optoelectronics and Measurement.
Vol. 567,
Issue. ,
p.
140.
Chatterjee, Bikramjit
Dundar, Canberk
Beechem, Thomas E.
Heller, Eric
Kendig, Dustin
Kim, Hyungtak
Donmezer, Nazli
and
Choi, Sukwon
2020.
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors.
Journal of Applied Physics,
Vol. 127,
Issue. 4,
Rathkanthiwar, Shashwat
Kalra, Anisha
Muralidharan, Rangarajan
Nath, Digbijoy N.
and
Raghavan, Srinivasan
2020.
V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111).
IEEE Transactions on Electron Devices,
Vol. 67,
Issue. 10,
p.
4281.
Wang, Xiaohui
Wang, Mengbo
Liao, Yulong
Yang, Lifeng
Ban, Qipei
Zhang, Xiang
Wang, Zhenying
and
Zhang, Shibo
2021.
Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication, and performance characterization..
Journal of Materials Chemistry C,
Vol. 9,
Issue. 38,
p.
13013.
Sato, Kosuke
Omori, Tomoya
Yamada, Kazuki
Tanaka, Shunya
Ishizuka, Sayaka
Teramura, Shohei
Iwayama, Sho
Iwaya, Motoaki
Miyake, Hideto
Takeuchi, Tetsuya
Kamiyama, Satoshi
and
Akasaki, Isamu
2021.
Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length.
Japanese Journal of Applied Physics,
Vol. 60,
Issue. 7,
p.
074002.
Lv, Zhisheng
Lu, Feifei
Liu, Lei
Cheng, Hongchang
Zhangyang, Xingyue
Sun, Yan
and
Guo, Xin
2022.
Photoabsorption and quantum efficiency of multi-diameter combined AlxGa1-xN nanostructure UV photodetectors.
Solid State Communications,
Vol. 358,
Issue. ,
p.
114992.
Das, S.
Lenka, T. R.
Talukdar, F. A.
Velpula, R. T.
and
Nguyen, H. P. T.
2023.
Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation.
Optical and Quantum Electronics,
Vol. 55,
Issue. 1,