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Absorption and photoluminescence studies of lightly alloyed CdTe(S) and CdS(Te)

Published online by Cambridge University Press:  21 March 2011

Diana Shvydka ,
A.D. Compaan  and
K.J. Price
Diana Shvydka
Affiliation:
The University of Toledo, Dept. of Physics and Astronomy, Toledo, OH 43606, USA
A.D. Compaan
Affiliation:
The University of Toledo, Dept. of Physics and Astronomy, Toledo, OH 43606, USA
K.J. Price
Affiliation:
The University of Toledo, Dept. of Physics and Astronomy, Toledo, OH 43606, USA
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Abstract

CdTe-rich and CdS-rich alloy films were deposited at temperatures less than 300C using an rf sputtering technique. Transmission-reflection and photoluminescence measurements were conducted to study the near-band edge properties of this ternary system for films of different compositions at room temperature and at 10K. Results were compared to data on defect states introduced in CdTe single crystal by annealing at several different overpressure conditions, including CdS and CdCl2 overpressures. A below-band-gap photoluminescence excitation technique was used to study systematically the effect of different steps in the production of the complete solar cell on band gap states of CdSxTe1−x alloys as well as pure binary constituents.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H6.2
Copyright
Copyright © Materials Research Society 2001

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References

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