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Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

Published online by Cambridge University Press:  01 February 2011

A. Nuñez Rodriguez ,
M.T.S. Nair  and
P.K. Nair
A. Nuñez Rodriguez
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos 62580, MEXICO. E-mail: [email protected]
M.T.S. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos 62580, MEXICO. E-mail: [email protected]
P.K. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos 62580, MEXICO. E-mail: [email protected]
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Abstract

Ag2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 730: Symposium V – Materials for Energy Storage, Generation, and Transport , 2002 , V5.14
Copyright
Copyright © Materials Research Society 2002

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References

1. Madelung, O. (editor) in Semiconductors other than Group IV Elements and III-V Compounds (Ed. Springer-Verlag Berlin Heidelberg, 1992), p. 13.Google Scholar
2. Kitaev, G.A., Bolshchicova, T.P. and Ustianzeva, T.A. (in russian), Inorganic Materials 3(6), 1080–1082 (1967).Google Scholar
3. Varkey, A.J., Solar Energy Materials 21, 291–296 (1991).Google Scholar
4. Lokhande, C.D., Materials Chemistry and Physics 27, 1–43 (1991).Google Scholar
5. Dhumure, S.S. and Lokhande, C.D., Materials Chemistry and Physics 27, 321–324 (1991).Google Scholar
6. Dhumure, S.S. and Lokhande, C.D., Materials Chemistry and Physics 28, 141–144 (1991).Google Scholar
7. Grozdanov, I.. Semicond. Sci. Technol. 9 (6-9), 1234–1241 (1994).Google Scholar
8. Nair, M.T.S., Guerrero, L. and Nair, P.K.. Semicond. Sci. Technol. 13, 1164–1169 (1998).Google Scholar
9. Arenas, O.L., Nair, M.T.S. and Nair, P.K.. Semicond. Sci. Technol. 12, 1323–1330 (1997).Google Scholar
10. Nair, M.T.S. and Nair, P.K.. Semicond. Sci. Technol. 5, 1225–1230 (1990).Google Scholar
11. Smith, R.A. in Semiconductors, 2nd ed. (Cambridge University Press, Great Britain, 1978) pp. 309–326.Google Scholar