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Absolute Photoionization Cross Sections of the Acceptor State Level of Chromium in Indium Phosphide

Published online by Cambridge University Press:  28 February 2011

Georges Bremond ,
G. Guillot ,
A. Nouailhat  and
G. Picoli
Georges Bremond
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
G. Guillot
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
A. Nouailhat
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
G. Picoli
Affiliation:
CNET/LAB/ICM, B.P. 40, 22301 Lannion Cédex (France)
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Abstract

We have analyzed the photoionization of Cr2+ in InP by the Deep Level Optical Spectroscopy (D.L.O.S.). The σ°n cross section exhibits both a resonant and non resonant character. The former corresponds to the internal transition 5T2-5E of Cr2+ while the threshold of the second allows us to locate the Cr2+/Cr3+ level below the conduction band. The absolute photoionization cross sections towards the two bands are very similar. In particular no selection rule seems to work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 371
Copyright
Copyright © Materials Research Society 1985

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