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ZnCdSeTe Semiconductor Compounds: Preparation and Properties

Published online by Cambridge University Press:  12 July 2011

Vello Valdna ,
Maarja Grossberg ,
Jaan Hiie ,
Urve Kallavus ,
Valdek Mikli ,
Taavi Raadik ,
Rainer Traksmaa  and
Mart Viljus
Vello Valdna
Affiliation:
Department of Materials Science, Tallinn University of Technology, 5 Ehitajate Rd., 19086 Tallinn, Estonia
Maarja Grossberg
Affiliation:
Department of Materials Science, Tallinn University of Technology, 5 Ehitajate Rd., 19086 Tallinn, Estonia
Jaan Hiie
Affiliation:
Department of Materials Science, Tallinn University of Technology, 5 Ehitajate Rd., 19086 Tallinn, Estonia
Urve Kallavus
Affiliation:
Centre for Materials Research, Tallinn University of Technology, 5 Ehitajate Rd., 19086 Tallinn, Estonia
Valdek Mikli
Affiliation:
Centre for Materials Research, Tallinn University of Technology, 5 Ehitajate Rd., 19086 Tallinn, Estonia
Taavi Raadik
Affiliation:
Department of Materials Science, Tallinn University of Technology, 5 Ehitajate Rd., 19086 Tallinn, Estonia
Rainer Traksmaa
Affiliation:
Centre for Materials Research, Tallinn University of Technology, 5 Ehitajate Rd., 19086 Tallinn, Estonia
Mart Viljus
Affiliation:
Centre for Materials Research, Tallinn University of Technology, 5 Ehitajate Rd., 19086 Tallinn, Estonia
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Abstract

Group II-VI narrow band gap compounds CdTe ZnCdTe and CdSeTe are known as the most suitable semiconductor materials for the room temperature gamma- and X-ray radiation detectors. In this work we investigated electronic properties of a quaternary compound ZnCdSeTe. Cl Cu Pr Er and oxygen doped host materials were synthesized from the grinded mixture of 6N purity ZnTe CdTe and CdSe by the help of CdCl2 flux. Precautions were applied to achieve an uniform doping and high quality of the crystal surfaces. Residue phases after the thermal treatments were removed by the help of a vacuum annealing. It was found that Zn increases a substitutional solubility of dopants in ZnCdSeTe and thus promotes optoelectronic properties of the ZnCdSeTe alloy. Cl substitutes Te whereas Cu and rare earth elements substitute Zn in ZnCdSeTe. Fabricated polycrystalline samples showed a high performance from NIR via VIS and UV to X-ray band. High stability good linearity and performance of samples was measured under X-ray excitation of Cu Kα 1.54056 Å at 40 kV.

Keywords

crystal growthelectronic materialII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1341: Symposium U – Nuclear Radiation Detection Materials , 2011 , mrss11-1341-u07-15
Copyright
Copyright © Materials Research Society 2011

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References

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