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Zn-Based Buffer Layer and High-Quality CIGS Films Grown by a Novel Method

Published online by Cambridge University Press:  01 February 2011

Akira Yamada ,
Fanying Meng ,
Yoshiyuki Chiba ,
Masahiro Kawamura  and
Makoto Konagai
Akira Yamada
Affiliation:
[email protected], Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, 2-12-1-S9-10, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan, +81-3-5734-2698, +81-3-5734-2897
Fanying Meng
Affiliation:
[email protected], Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, 2-12-1-S9-10, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Yoshiyuki Chiba
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Masahiro Kawamura
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Makoto Konagai
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
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Abstract

ZnMgO was fabricated by MOCVD and the films were applied to a buffer layer of Cu(InGa)Se2 solar cells.

A nove growth method for Cu(InGa)Se2 was described in which cracked Se was utilized.

Keywords

photovoltaiccompoundthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y02-06
Copyright
Copyright © Materials Research Society 2007

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