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W/Si1-xGex Schottky Barrier: Effect of Stress and Composition

Published online by Cambridge University Press:  22 February 2011

F. Meyer ,
V. Aubry ,
P. Warren  and
D. Dutartre
F. Meyer
Affiliation:
Institut d'Electronique Fondamentale, CNRS URA 22, Bât. 220, Université Paris Sud, 91405 Orsay Cedex, France
V. Aubry
Affiliation:
FRANCE TELECOM CNET BP 98, Chemin du Vieux Chêne, 38243 Meylan Cedex, France
P. Warren
Affiliation:
FRANCE TELECOM CNET BP 98, Chemin du Vieux Chêne, 38243 Meylan Cedex, France
D. Dutartre
Affiliation:
FRANCE TELECOM CNET BP 98, Chemin du Vieux Chêne, 38243 Meylan Cedex, France
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Abstract

The Schottky barrier height of W on Si1-xGex/ Si has been investigated as a function of composition and strain retained in the alloy for a given composition. The barrier height to ntype films does not vary significantly while that to p-type films follows the same trends than the band gap: it decreases with x and the strain. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 167
Copyright
Copyright © Materials Research Society 1994

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References

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