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Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics

Published online by Cambridge University Press:  01 February 2011

Sandrine Rivillon Amy ,
Yves J Chabal ,
Fabrice Amy ,
Antoine Kahn ,
Cristiano Krugg  and
Paul Kirsch
Sandrine Rivillon Amy
Affiliation:
[email protected] UniversityDepartment of Chemistry and Chemical Biology136 Frelinghuysen RdPiscataway NJ 08854United States
Yves J Chabal
Affiliation:
[email protected], Rutgers University, Department of Chemistry and Chemical Biology, 136 Frelinghuysen Rd, Piscataway, NJ, 08854, United States
Fabrice Amy
Affiliation:
[email protected], Princeton University, Electrical Engineering Department, Princeton, NJ, 08544, United States
Antoine Kahn
Affiliation:
[email protected], Princeton University, Electrical Engineering Department, Princeton, NJ, 08544, United States
Cristiano Krugg
Affiliation:
[email protected], Sematech, AGS dielectrics, Austin, Tx, 78741, United States
Paul Kirsch
Affiliation:
[email protected], Sematech, AGS dielectrics, Austin, Tx, 78741, United States
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Abstract

One of the major difficulties preventing the wide use of germanium (epi or bulk) as a gate material is the poor stability of its oxide, leading to reproducibility and reliability issues. In contrast to silicon, the nature and thickness of Ge “native” oxides are history dependent, and most phases of germanium oxide are water-soluble. As a result, the procedures for passivating Ge surfaces with hydrogen (HF last) are more complex and less forgiving.

We have used infrared absorption spectroscopy and x-ray photoelectron spectroscopy to investigate the nature of oxidized and H-terminated Ge surfaces. The GeO2, GeO and GeC phases have been identified and quantified as a function of processing conditions. The stability of the H-terminated surfaces has been examined in air and in controlled environments. The H-passivated Ge surfaces are found to be much less stable in air than H-terminated Si surfaces.

Keywords

Gepassivationinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E01-05
Copyright
Copyright © Materials Research Society 2006

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