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Vibrational Properties of a-Si:H Films Containing Voids: Experiment and Modeling

Published online by Cambridge University Press:  15 February 2011

N. Barriquand ,
V. Paillard ,
P. Roca i Cabarrocas ,
G. Landa  and
M. Djafari-Rouhani
N. Barriquand
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex-4, France, ESA5477 associée au CNRS [email protected]
V. Paillard
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex-4, France, ESA5477 associée au CNRS
P. Roca i Cabarrocas
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces, UMR 7647 associée au CNRS, Ecole Polytechnique, F-91128 Palaiseau Cedex, France
G. Landa
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex-4, France, ESA5477 associée au CNRS
M. Djafari-Rouhani
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex-4, France, ESA5477 associée au CNRS Laboratoire d'Analyse et d'Architecture des Systèmes-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse cedex, France
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Abstract

In this paper, we present results about the vibrational properties of hydrogenated amorphous silicon films. We expect to explain the slight differences observed in the Raman spectra using atomic-scale modeling. In particular, we focuse on the correlation of our results to the density of samples. This should give quantitative structural information which could be correlated to both macroscopic properties and elaboration conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 451
Copyright
Copyright © Materials Research Society 1999

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