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Vertically Aligned CNTs Embedded in Cr/TiO2 Membranes For Realization of Ion Sources

Published online by Cambridge University Press:  01 February 2011

Yaser Abdi ,
Mehdi Sadeghi ,
Shams Mohajerzadeh ,
Javad Koohsorkhi  and
Bahman Hekmat-Shoar
Yaser Abdi
Affiliation:
[email protected], University of Tehran, Tehran, 14395, Iran
Mehdi Sadeghi
Affiliation:
[email protected], University of Tehran, Tehran, 14395, Iran
Shams Mohajerzadeh
Affiliation:
[email protected], University of Tehran, Electrical and Computer Eng., Nano-Electronic Center of Excellence, North Kargar Ave, Campus No. 2, Tehran, 14395, Iran, +9821 88012 1235
Javad Koohsorkhi
Affiliation:
[email protected], University of Tehran, Tehran, 14395, Iran
Bahman Hekmat-Shoar
Affiliation:
hekmat@ Princeton.EDU, University of Tehran, Tehran, 14395, Iran
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Abstract

PECVD-grown carbon nanotubes on (100) silicon membranes have been realized and exploited for electron and ion emission applications. The growth of CNT's is achieved by a mixture of hydrogen and acetylene gases in a CVD reactor and a 5-10nm thick nickel is used as the seed for the growth. The presence of a DC-plasma yields a vertical growth of carbon nanotubes. The as-grown nanotubes are encapsulated by means of an insulating TiO2 layer. The formation of a thin membrane is possible by means of a chemical anisotropic etching technique. The membrane is then removed from the back side to fully suspend the CNT-holding TiO2 layer. Upon exposure to a plasma ashing step the nanotubes are partially removed and a both-end opened hollow nanostructure is formed which can be used as a miniaturized ion source. The CNT-holding substrate can be exploited as a grid to extract the ions from an ionization chamber just underneath the membrane. Applying a proper accelerating electric field, positive ions made inside a DC discharge cavity can form a beam-shape emission of ions towards the opposite negative electrode. The beam is well suited for a source of ion lithography. In which, the emission has the ability of direct writing on a photo-resist coated substrates. Preliminary nano-scale dots have been created with sizes between 50 and 80nm. Scanning electron microscopy has been used to investigate the results.

Keywords

nanostructureion-beam processinglithography (removal)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1018: Symposium EE – Applications of Nanotubes and Nanowires , 2007 , 1018-EE14-34
Copyright
Copyright © Materials Research Society 2007

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