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Vertical integration of hydrogenated amorphous silicon devices on CMOS circuits

Published online by Cambridge University Press:  01 February 2011

N. Wyrsch ,
C. Miazza ,
C. Ballif ,
A. Shah ,
N. Blanc ,
R. Kaufmann ,
F. Lustenberger  and
P. Jarron
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
C. Miazza
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
C. Ballif
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
N. Blanc
Affiliation:
CSEM SA, Badenerstrasse 569, P.O. Box, CH-8048 Zürich,Switzerland
R. Kaufmann
Affiliation:
CSEM SA, Badenerstrasse 569, P.O. Box, CH-8048 Zürich,Switzerland
F. Lustenberger
Affiliation:
CSEM SA, Badenerstrasse 569, P.O. Box, CH-8048 Zürich,Switzerland
P. Jarron
Affiliation:
CERN, CH-1211 Genève 23, Switzerland.
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Abstract

Monolithic integration of sensing devices usually requires sharing the CMOS chip floor space between sensors and their readout electronics. Vertical integration of the sensor on top of the electronics allows one to have the full chip area dedicated to sensing. For light detection, the deposition of hydrogenated amorphous silicon (a-Si:H) photodiodes on top of CMOS readout circuits offers several advantages compared to standard CMOS imagers. The issues regarding the design of a-Si:H photodiodes, their integration and the influence of the CMOS chip design (i.e. its surface morphology) on a-Si:H diode performance are discussed. Examples of TFA sensors for vision and particle detection are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 869: Symposium D – Materials, Integration and Technology for Monolithic Instruments , 2005 , D1.1
Copyright
Copyright © Materials Research Society 2005

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