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Variation in Dislocation Pattern Observed in SCS Films Fractured by Tensile Test: Effects of Film Thickness and Testing Temperature

Published online by Cambridge University Press:  01 February 2011

Shigeki Nakao ,
Taeko Ando ,
Shigeo Arai ,
Noriyuki Saito  and
Kazuo Sato
Shigeki Nakao
Affiliation:
[email protected], Nagoya University, Department of Micro-Nano Systems Engineering, Furo-cho, Chikusa-ku, Engineering building 2, Room#314, Nagoya, 464-8603, Japan, +81-52-789-5224, +81-52-789-5032
Taeko Ando
Affiliation:
[email protected], Nagoya University, Department of Micro-Nano Systems Engineering, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Shigeo Arai
Affiliation:
[email protected], Nagoya University, High Voltage Electron Microscope Laboratory, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Noriyuki Saito
Affiliation:
[email protected], Nagoya University, High Voltage Electron Microscope Laboratory, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Kazuo Sato
Affiliation:
[email protected], Nagoya University, Department of Micro-Nano Systems Engineering, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
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Abstract

This paper reports a transition in the fracture behavior of micron-sized single-crystal-silicon (SCS) film in an MEMS structure for various film thicknesses and ambient temperatures. The mean fracture toughness of 4-µm-thick SCS films was 1.28 MPa at room temperature (RT), and the value increased as the film thickness decreased, reaching 2.91 MPa for submicron-thick films. The fracture toughness of 4-µm-thick film did not change for ambient temperatures ranging from RT to 60ºC. However, it drastically increased at 70ºC and reached 2.60 MPa at 150ºC. Enhanced dislocation activity in the SCS crystal near the fracture surface was observed on 1-µm-thick film at RT and 4-µm-thick film at 80ºC by high-voltage electron microscopy. This change in dislocation activity seemed to correlated with the transition in fracture behavior.

Keywords

Sitoughnessdislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD03-21
Copyright
Copyright © Materials Research Society 2008

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