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Vapor Deposition of Parylene Films from Precursors

Published online by Cambridge University Press:  22 February 2011

L. You ,
G.-R. Yang ,
C.-I. Lang ,
P. Wu ,
J. A. Moore ,
J. F. McDonald  and
T.-M. Lu
L. You
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
G.-R. Yang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
C.-I. Lang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
P. Wu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J. A. Moore
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J. F. McDonald
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
T.-M. Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Parylene films, depending on the type, are thermally stable up to 530°C and have low dielectric constants ranging from 2.35 to 3.15. One of the most interesting properties of this material is its vapor depositability. Conventional vapor deposition involves cracking the parylene dimers at temperatures from 600 to 730 °C and polymerizingthe monomers at - 35 °C to RT. We have developed a simpler and less expensive technique that directly uses the precursors from which the dimers are made. This method requires the use of metal catalysts to produce parylene films. We have used the precursors α,α'-dibromo-p-xylene and dibromotetrafluoro-p-xylene to produce N-type and F-type parylene films. FTIR, XPS, thermal stability, and electrical studies show that the F-type parylene films grown from the precursors are comparable to, or sometimes better than, the films grown from dimer, and have potential microelectronics applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 593
Copyright
Copyright © Materials Research Society 1993

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References

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