Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-27T01:26:35.230Z Has data issue: false hasContentIssue false

USJ Dopant Bleaching and Device Effects in Advanced Microelectronic Plasma Enhanced Resist Strip Processing

Published online by Cambridge University Press:  01 February 2011

Frank Wirbeleit
Affiliation:
[email protected], Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany, +49 351 277 4527, +49 351 277 94527
Volker Grimm
Affiliation:
[email protected], Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany
Christian Krüger
Affiliation:
[email protected], Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany
Christoph Streck
Affiliation:
[email protected], Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany
Roger Sonnemans
Affiliation:
[email protected], Axcelis Technologies, Inc., Beverly, MA, 01915, United States
Ivan Berry
Affiliation:
[email protected], Axcelis Technologies, Inc., Beverly, MA, 01915, United States
Get access

Abstract

The impact of low temperature plasma resist strip on doped silicon surface and microelectronic device performance is investigated using different chemical gas mixtures. In this investigation, different plasma treatments where applied on non-structured and structured silicon on insulator (SOI) wafers post ultra shallow surface implants .The main surface impacts dopant bleaching and oxide loss in conjunction with plasma enhanced re-oxidation are analyzed by time of flight secondary ion mass spectrometry (TOF-SIMS) and electrical measurements of microelectronic test devices. As the result, a long range plasma radiation induced dopant activation and deactivation is separated as the main effect from surface oxide loss and re-oxidation processes. This implies further optimization of plasma resist strip processes for device improvements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Jones, M. A. et al., Proceedings of the 11th International Conference on Ion Implantation Technology, IEEE, New York, 1997, pp. 182 Google Scholar
2 Perel, AS, Horsky, TN, J. Vac. Sci. Technol. A 18, 4, Jul/Aug 2000 pp. 1800 Google Scholar
3 Orvek, K J and Huffman, C, Nucl. Instrum. Methods B7/8 (1985) P501 Google Scholar
4 Fujimura, S., Konno, J, Hikazutani, K, Yano, H, Jpn, J. Appl. Phys. 28, 10, 1989 pp. 2130 Google Scholar
5 Gillespie, P., Berry, I., Sakthivel, P., Semiconductor International, October, 1999 Google Scholar
6 McOmber, JI. Ostrowski, K, Meloni, M., Eddy, R., Buccos, P., Nucl. Instrum. Methods B74 (1993) pp. 266270 Google Scholar
7 Reinhardt, K., Pavel, EG., Fernandes, N., Neil, D., IBM Technical Symposium, France October 1999 Google Scholar
8 Kirkpatrick, A, Fernandes, N, Uk, T, Patrizi, G, MICRO:July/August 1998:Google Scholar
9 Lee, K. T. and Raghavan, S., Electrochemical and Solid-State Letters, 2 (4) 172174, 1999 Google Scholar
10 Knotter, D. M., Gendt, S.de, Mertens, P.W., and Heyns, M. M., Journal of The Electrochemical Society, 147 (2) 736740, 2000 Google Scholar
11 Liu, L., Pey, K.L., Foo, P., Electron Devices Meeting, IEEE Hong Kong, pp17, June, 1996 Google Scholar
12 Vitale, S. A. and Smith, B. A., J. Vac. Sci. Technol. B 21(5), Sep/Oct 2003 Google Scholar
13 Kim, K., et.al., J. Vac. Sci. Technol. B 14(4), Jul/Aug 1996 Google Scholar
14 Seebauer, E. G., Proc. MRS Spring Symposium, 2008 Google Scholar
15 Arnaud, F., et.al. Proceedings UCPSS Conference, Brussels Belgium, September 2004 Google Scholar
16 Buh, G. H., et.al. J. Vac. Sci. Technol. B, Vol. 24, No. 1, pp 449, Jan/Feb 2006 Google Scholar
17 Huda, M. Q., Sakamoto, K., Tanoue, H., Electrochemical and Solid-State Letters, 6 (10) G117–G118, 2003 Google Scholar
18 Shibahara, K., Furumoto, H., Egusa, K., Koh, M., Yokohama, S., Mat. Res. Soc. Symp. Proc. 532, 23 (1998)Google Scholar