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Using Atomic Steps to Control Pentacene Crystal Orientation Texture

Published online by Cambridge University Press:  26 February 2011

Valerian Ignatescu ,
Jing-Chih M. Hsu ,
Alex C. Mayer ,
Jack M. Blakely  and
George G. Malliaras
Valerian Ignatescu
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, B60 Bard Hall, Ithaca, NY, 14853, United States
Jing-Chih M. Hsu
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
Alex C. Mayer
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
Jack M. Blakely
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
George G. Malliaras
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
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Abstract

We have studied the effect of substrate atomic steps on the azimuthal alignment of vapor-deposited pentacene crystals. Si(111) substrates with a low miscut angle were annealed at high temperature in ultra-high vacuum before the pentacene deposition; this produced surfaces with atomically flat terraces and arrays of parallel atomic steps. AFM analysis shows that pentacene deposited on these heated samples, at a low deposition rate, results in significant alignment of the pentacene crystals along the atomic steps.

Keywords

scanning probe microscopy (SPM)Sigrain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S14-07
Copyright
Copyright © Materials Research Society 2007

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References

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