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Undoped Lec GaAs as an Infrared Bolometer Detector
Published online by Cambridge University Press: 15 February 2011
Abstract
Undoped LEC GaAs grown with very low residual acceptor concentration is often low resistivity with an activation energy for conduction of 0.43 eV. We demonstrate that this material can form a very sensitive bolometer element and show how large two dimensional bolometer arrays might be fabricated from this material.
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- Research Article
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- Copyright © Materials Research Society 1994
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