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Ultraviolet (UV) Irradiation Effect on Minority-Carrier Recombination Lifetime in Silicon Wafers with Oxide and Nitride Films

Published online by Cambridge University Press:  21 February 2011

L. Zhong  and
F. Shimura
L. Zhong
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
F. Shimura
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
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Abstract

A new method based upon photoconductance measurement of the minority-carrier recombination lifetime is developed to investigate defects both in dielectric films and on the interface. In this method, surface recombination process in silicon substrate is used as a probe to detect the interface traps generated by ultraviolet (UV) irradiation as well as the defects in a film whose electronic state can be excited by UV irradiation. A variety of films, including native, chemical vapor deposited (CVD) and thermal oxide as well as CVD nitride, have been studied. In CVD nitride, for example, evidence is provided that K-centers, the main charge trapping defects, have a negative correlation energy (negative-U).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 471
Copyright
Copyright © Materials Research Society 1994

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References

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