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Ultraviolet Photodetection Properties of ZnO Microtubes

Published online by Cambridge University Press:  01 February 2011

Jiping Cheng
Affiliation:
[email protected], Pennsylvania State University, Materials Research Institute, 129A Materials Research Lab, University Park, PA, 16802, United States, 814-865-4571, 814-865-2326
Ming Fu
Affiliation:
[email protected], Pennsylvania State University, University Park, PA, 16802, United States
Yunjin Zhang
Affiliation:
[email protected], Pennsylvania State University, University Park, PA, 16802, United States
Ruyan Guo
Affiliation:
[email protected], Pennsylvania State University, University Park, PA, 16802, United States
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Abstract

Photodetectors based on wide-bandgap semiconductors have demonstrated several advantages over traditional ultraviolet (UV) detectors (photomultiplier tubes and Si-based UV detectors) such as low power consumption, high stability, and no need of other optical filters. ZnO stands a good chance of being a candidate material for solar-blind UV detection because of its direct bandgap of 3.37eV and high photoresponse. In this work, single crystal ZnO microtubes synthesized using a microwave-heating growth method and their UV photodetection properties were studied. The ZnO microtubes exhibited relatively fast UV photoresponse with a cut-off wavelength ∼370 nm, indicating their potential applications as high efficient and low cost UV detectors.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Razeghi, M., Short-wavelength solar-blind detectors – status, prospects, and markets, Proceedings of the IEEE, 90 (6), 10061014 (2002)Google Scholar
2. Razeghi, M., and Rogalski, A., Semiconductor ultraviolet detectors, J. Appl. Phys. 79 (10), 74337473 (1996)Google Scholar
3. Monroy, E., Omnes, F., and Calle, F., wide-bandgap semiconductor ultraviolet photodetectors, Semicond. Sci. Technol. 18, R33–R51 (2003)Google Scholar
4. Liu, Y., Gorla, C. R., Liang, S., Emanetoglu, N., Lu, Y., J. Electron. Mater. 29, 69-(2000)Google Scholar
5. Liang, S., Sheng, H., Liu, Y., Huo, Z., Lu, Y., and Shen, H., ZnO Schottky ultraviolet photodetectors, J. Cryst. Growth, 225, 110113 (2001)Google Scholar
6. Basak, D., Amin, G., Mallik, B., Paul, G. K., and Sen, S. K., Photoconductive UV detectors on sol-gel-synthesized ZnO films, J. Cryst. Growth, 256, 7377 (2003)Google Scholar
7. Cheng, J., Qing-Ming Wang, and Ruyan Guo, Zinc oxide single-crystal microtubes, Appl. Phys. Lett., 85 (22), 5140–42 (2004)Google Scholar
8. Takahashi, Y., Kanamori, M., Kondoh, A., Minoura, H., and Ohya, Y., Jpn. J. Appl. Phys. 33, 6611 (1994)Google Scholar