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Ultraviolet Emitting SrS:Te Thin Films

Published online by Cambridge University Press:  11 February 2011

J.M. Fitz-Gerald ,
J. Hoekstra ,
J.D. Fowlkes  and
P.D. Rack
J.M. Fitz-Gerald
Affiliation:
University of Virginia, Dept of Materials Science and Engineering, 116 Engineer's Way Charlottesville, VA 22904–4745
J. Hoekstra
Affiliation:
University of Virginia, Dept of Materials Science and Engineering, 116 Engineer's Way Charlottesville, VA 22904–4745
J.D. Fowlkes
Affiliation:
University of Tennessee, Department of Materials Science and Engineering, 603 Dougherty Hall, Knoxville, TN 37996–2200
P.D. Rack
Affiliation:
University of Tennessee, Department of Materials Science and Engineering, 603 Dougherty Hall, Knoxville, TN 37996–2200
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Abstract

In the bulk SrS has an indirect bandgap of ∼ 4.32 eV. When SrS is doped with tellurium, ultraviolet emission occurs at 360 nm (for singlet) and 400nm (for Te-Te dimers) due to recombination from bound exciton states. In this paper we discuss the ultraviolet emission of pulsed laser deposited thin films of SrS:Te grown at room temperature on Si. Deposited film thickness ranged from 0.1 – 1.5 mm, with optimized films grown at ∼0.5 mm to avoid peeling and cracking. Te doping was incorporated by both ion implantation and conventional diffusion of deposited Te capping films. The characteristics of the ultraviolet emission will be discussed along with results from microstructural, chemical and optical characterization techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M4.1
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1 Thomas, D.G., Hopfield, J.J., Frosch, C.J., Physical Review B, Vol. 15, p. 857 (1965).Google Scholar
2 Hopfield, J.J., Thomas, D.G., Lynch, R.T., “Isoelectronic Donors and Acceptors,” Physical Review Letters, Vol. 17 no. 6, p. 312 (1966).Google Scholar
3 Aten, A.C., Haanstra, J.H., Physical Letters, Vol. 11 p. 97 (1964).Google Scholar
4 Aten, A.C., Haanstra, J.H., de Vries, H., Phillips Research Reports, Vol. 20 p. 395 (1968).Google Scholar
5 Cuthbert, J.D., Thomas, D.G., “Optical Properties of Tellurium as an Isoelectronic Trap in Cadmium Sulfide,” Journal of Applied Physics, Vol. 39 no. 3 (1968).Google Scholar
6 Iseler, G.W., Strauss, A.J., “Photoluminescence Due To Isoelectronic Oxygen and Tellurium Traps in II-VI Alloys,” Journal of Luminescence, Vol. 3, p. 1 (1970).Google Scholar
7 Roessler, D.M., “Luminescence in Tellurium- Doped Cadmium Sulfide,” Journal of Applied Physics, Vol. 41 no. 11, p. 4589 (1970).Google Scholar
8 Fukushima, T., Shionoya, S., “Luminescence of Bound Excitons in Tellurium-Doped Zinc Sulfide Crystals,” Japanese Journal of Applied Physics, Vol. 12 no. 4, p. 549 (1973).Google Scholar
9 Sou, I.K., Wong, K.S., Yang, Z.Y., Wang, H., Wong, G.K.L., “Highly Efficient Light Emission From ZnS1- xTex Alloys,” Applied Physics Letters, Vol. 66 no. 15, p. 1915 (1995).Google Scholar
10 Naumov, A., Stanzl, H., Wolf, K., Lankes, S., Gebhardt, W., “Exciton Recombination in Te-rich ZnSexTe1-x Epilayers,” Journal of Applied Physics, Vol. 74 no. 10, p. 6178 (1993).Google Scholar
11 Lewis, J.S., Rack, P.D., Holloway, P.H., “Photoluminescence and Thermal Quenching of Bound Excitons in (BaS)1-x(SrTe)x ,” Journal of Crystal Growth, Vol. 184/185, p. 1175 (1998).Google Scholar
12 Rack, P.D., Holloway, P.H., Park, W., Wagner, B.K., and Summers, C.J., “Bound Exciton Luminescence in Te-Doped SrS”, Journal of Applied Physics vol. 84 no. 7, p3676 (1998).Google Scholar
13 Rack, P.D., Holloway, P.H., Park, W., Wagner, B.K., Penczek, J., Summers, C.S., Warren, W.L. and Vanheusden, K., “Blue Excitonic Emission From SrS:Te Powders,” Proceedings of the Second International Conference on the Science and Technology of Display Phosphors, p. 267 (Nov. 1996).Google Scholar
14 Kaneko, Y., Morimoto, K., Koda, T., “Optical Properties of Alkaline-Earth Chalcogenides. I. Single Crystal Growth and Infrared Reflection Spectra Due to Optical Phonons” Journal of the Physical Society of Japan, Vol. 51 no. 7, p. 2247 (1982).Google Scholar
15 Kaneko, Y., Koda, T., “New Developments in IIa-VIb (Alkaline-Earth Chalcogenide) Binary Semiconductors,” Journal of Crystal Growth, Vol. 86, p. 72 (1988).Google Scholar
16 Rack, P. D., Naman, A., Sun, S., Nguyen, T., Jones, K., and Holloway, P. H., Microstructural Changes and Their Effects on the Emission Spectra in SrS:Ce Thin Film Electroluminescent Devices, Proceedings of the 8th International Conference on Electroluminescence, p. 355–358 (August 1996).Google Scholar