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Two-Step Laser Recrystallization of Silicon Stripes in Sio2 Grooves for Crystallographic Orientation Control

Published online by Cambridge University Press:  25 February 2011

K. Egami ,
M. Kimura ,
T. Hamaguchi  and
N. Endo
K. Egami
Affiliation:
Fundamental Research Laboratories
M. Kimura
Affiliation:
Fundamental Research Laboratories
T. Hamaguchi
Affiliation:
R&D Planning and Technical Service Division
N. Endo
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, Miyazaki, Miyamae-ku, Kawasaki 213, JAPAN
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Abstract

We demonstrate a new two step laser recrystallization for crystallographic orientation control. In the cw Ar ion laser recrystallization of silicon stripes in the structure consisting of SiO2 grooves/polycrystalline Si sublayer/backing substrates, first, one edge of poly-Si stripes is intentionally recrystallized under relatively low laser power and a long dwell time in order to form a strong <100> texture with lamellar grains, second, poly-Si stripes are fully recrystallized using the above <100> texture as seed crystals by scanning a laser beam along the stripes. We discuss a strong <100> texture formation related to partially molten state in the first process of secondary seed formation, and use of a grooved structure with poly-Si sublayer suppressing edge nucleation during lateral epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 669
Copyright
Copyright © Materials Research Society 1985

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References

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