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Two-Step Capacitance Transients From an Oxygen Impurity Defect

Published online by Cambridge University Press:  01 February 2011

Shouvik Datta ,
J. David Cohen ,
Yueqin Xu  and
Howard M. Branz
Shouvik Datta
Affiliation:
[email protected], University of Oregon, Physics, 1371 E 13th Avenue, Eugene, OR, 97403, United States, 541-346-4774, 541-346-3422
J. David Cohen
Affiliation:
[email protected], University of Oregon, Department of Physics, 1371 E 13th Avenue, Eugene, OR, 97403, United States
Yueqin Xu
Affiliation:
[email protected], National Renewable Energy Laboratory, Silicon Materials Group, 1617 Cole Boulevard, Golden, CO, 80401, United States
Howard M. Branz
Affiliation:
[email protected], National Renewable Energy Laboratory, Silicon Materials Group, 1617 Cole Boulevard, Golden, CO, 80401, United States
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Abstract

This paper describes the study of an electron-trapping defect which underwent significant configurational relaxation in oxygen contaminated hydrogenated amorphous silicon-germanium (a-Si,Ge:H) alloys grown by hot-wire chemical vapor deposition. An unusual two-step electron emission from this relaxed defect is studied using junction-capacitance-based measurements. In this work, we monitor the recovery of the relaxed defect after filling it by photoexcited electrons and also by electrons injected with a voltage filling pulse. The dependence of the transient shape on filling pulse time is described. We have also performed experiments which clearly demonstrate that this is a bulk defect and exclude contributions from any additional blocking junctions.

Keywords

amorphousSidefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A10-03
Copyright
Copyright © Materials Research Society 2008

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References

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