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Triple-Junction Thin-Film Silicon Solar Cells on W-Textured ZnO for Applications to Low-Concentration Photovoltaics

Published online by Cambridge University Press:  23 January 2013

Shunsuke Kasashima ,
Yuki Moriya ,
Porponth Sichanugrist  and
Makoto Konagai
Shunsuke Kasashima
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, Japan
Yuki Moriya
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, Japan
Porponth Sichanugrist
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, Japan
Makoto Konagai
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, Japan Photovoltaic Research Center (PVREC), Tokyo Institute of Technology, Japan
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Abstract

We report for the first time the a-Si:H/μc-Si:H/μc-Si:H triple-junction solar cells fabricated on W-textured ZnO having a very high haze value which can improve light scattering effect. For further enhancement of light confinement effects, p-type a-SiOx:H and μc-SiOx:H as wide-gap window-layers, n-type μc-SiOx:H as intermediate layers and a back reflector were employed in these solar cells too. From theoretical analysis, we have found an advantage of a-Si:H/μc-Si:H/μc-Si:H structure for an application to low-concentration photovoltaics. For the fabricated solar cells, a conversion efficiency of 8.86% at 1 sun and and 9.86% under 7.2 suns, and a total photocurrent from each subcell of 24.1 mA/cm2 were achieved although there was still a current mismatch among component subcells.

Keywords

thin filmSiphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1493: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids , 2013 , pp. 219 - 224
Copyright
Copyright © Materials Research Society 2012 

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