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Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures

Published online by Cambridge University Press:  26 February 2011

Lyuba A. Delimova ,
I. V. Grekhov ,
D. V. Mashovets ,
Sangmin Shin ,
June-Mo Koo ,
Suk-Pil Kim ,
Youngsoo Park ,
V. P. Afanasjev ,
P. V. Afanasjev  and
A. A. Petrov
Lyuba A. Delimova
Affiliation:
[email protected], Ioffe Physicotechnical Institute Russian Academy of Sciences, Solid State Electronics Division, Politekhnicheskaya str. 26, St.Petersburg, N/A, 194021, Russian Federation, +7 812 2479321, +7 812 2479123
I. V. Grekhov
Affiliation:
[email protected], Ioffe Physicotechnical Institute Russian Academy of Sciences, Solid State Electronics Division, Russian Federation
D. V. Mashovets
Affiliation:
[email protected], Ioffe Physicotechnical Institute Russian Academy of Sciences, Solid State Electronics Division, Russian Federation
Sangmin Shin
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Materials and Devices Laboratory, Korea, Republic of
June-Mo Koo
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Process Engineering Laboratory, Korea, Republic of
Suk-Pil Kim
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Process Engineering Laboratory, Korea, Republic of
Youngsoo Park
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Process Engineering Laboratory, Korea, Republic of
V. P. Afanasjev
Affiliation:
[email protected], State St.Petersburg Electrotechnical University "LETI", Microelectronics Department, Russian Federation
P. V. Afanasjev
Affiliation:
[email protected], State St.Petersburg Electrotechnical University "LETI", Microelectronics Department, Russian Federation
A. A. Petrov
Affiliation:
[email protected], State St.Petersburg Electrotechnical University "LETI", Microelectronics Department, Russian Federation
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Abstract

A method providing estimation of the trap density at metal/ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on the recharge of interface traps induced by external bias pulse applied to the metal/ferroelectric/metal structure. It is shown that the transient current under bias pulse can be controlled by the traps recharge on the reverse-biased interface. Using the method, the trap charge density on interfaces of MOCVD Pt/PZT/Ir(Ti/SiO2/Si) and Ir/PZT/Ir(Ti/SiO2/Si) capacitors were found from transient current measurements.

Keywords

ferroelectricfilmdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-27
Copyright
Copyright © Materials Research Society 2006

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