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Transport Properties of Topological Insulator Bi0.83Sb0.17 Nanowires

Published online by Cambridge University Press:  27 April 2015

L.A. Konopko ,
A.A. Nikolaeva ,
T.E. Huber  and
J.P. Ansermet
L.A. Konopko
Affiliation:
Ghitu Institute of Electronic Engineering and Nanotechnologies, Chisinau 2028, Moldova International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland
A.A. Nikolaeva
Affiliation:
Ghitu Institute of Electronic Engineering and Nanotechnologies, Chisinau 2028, Moldova International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland
T.E. Huber
Affiliation:
Howard University, 500 College St. N.W., Washington, DC 20059, U.S.A.
J.P. Ansermet
Affiliation:
ICMP, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Abstract

We have investigated the transport properties of topological insulator based on single-crystal Bi0.83Sb0.17 nanowires. The single-crystal nanowire samples in the diameter range 200 nm – 1.1 μm were prepared by the high frequency liquid phase casting in a glass capillary using an improved Ulitovsky technique; they were cylindrical single-crystals with (1011) orientation along the wire axis. In this orientation, the wire axis makes an angle of 19.5o with the bisector axis C1 in the bisector-trigonal plane. Bi0.83Sb0.17 is a narrow gap semiconductor with energy gap at L point of Brillouin zone ΔE= 21 meV. In accordance with the measurements of the temperature dependence of the resistivity of the samples resistance increases with decreasing temperature, but at low temperatures decrease in the resistance is observed. This effect, decrease in the resistance, is a clear manifestation of the interesting properties of topological insulators - the presence on its surface of a highly conducting zone. The Arrhenius plot of resistance R in samples with diameter d=1.1 µm and d=200 nm indicates a thermal activation behavior with an activation gap ΔE= 21 and 35 meV, respectively, which proves the presence of the quantum size effect in these samples. We found that in the range of diameter 1100 nm - 200 nm when the diameter decreases the energy gap is growing as 1/d. We have investigated magnetoresistance of Bi0.83Sb0.17 nanowires at various magnetic field orientations. From the temperature dependences of Shubnikov de Haas oscillation amplitude for different orientation of magnetic field we have calculated the cyclotron mass mc and Dingle temperature TD for longitudinal and transverse (B||C3 and B||C2) directions of magnetic fields, which equal 1.96*10-2m0, 9.8 K, 8.5*10-3m0 , 9.4 K and 1.5*10-1m0 , 2.8 K respectively. The observed effects are discussed.

Keywords

semiconductingnanoscalemagnetoresistance (transport)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1785: Symposium S – Semiconductor Nanowires and Devices for Advanced Applications , 2015 , pp. 1 - 6
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Hsieh, D., Qian, D., Wray, L., Xia, Y., Hor, Y. S., Cava, R. J., Hasan, M. Z., Nature 452, 970 (2008).CrossRefGoogle Scholar
Hsieh, D., Xia, Y., Wray, L., Qian, D., Pal, A., Dil, J. H., Meier, F., Osterwalder, J., Bihlmayer, G., Kane, C. L., Hor, Y. S., Cava, R. J. and Hasan, M. Z., Science 323, 919 (2009).CrossRefGoogle Scholar
Edel’man, V. S., Adv. Phys. 25, 555 (1976).CrossRefGoogle Scholar
Liu, Y., Allen, E., Phys. Rev. B 52, 1566 (1995).CrossRefGoogle ScholarPubMed
Fu, L., Kane, C.L, Phys. Rev. B 76, 045302 (2007).CrossRefGoogle Scholar
Gitsu, D., Konopko, L., Nikolaeva, A., and Huber, T. E., Appl. Phys. Lett. 86, 102105 (2005).CrossRefGoogle Scholar
Lin, Y., Sun, X., Dresselhaus, M.S., Phys. Rev. B 62, 4610 (2000).CrossRefGoogle Scholar
Taskin, A. and Ando, Y., Phys. Rev. B 80, 085303 (2009).CrossRefGoogle Scholar